FDD603AL, Rev. B

Figure 7. Gate-Charge Characteristics.

Figure 8. Capacitance Characteristics.

0

20

40

60

0.01

0.1

1

10

100

1000

SINGLE PULSE TIME (SEC)

SINGLE PULSE

o

C/W

o

C

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient themal response will change depending on the circuit board design.

0.0001

0.001

0.01

0.1

1

10

100

300

0.0001

0.001

0.01

0.1

1

t , TIME (sec)

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t / t

1

2

R

(t) = r(t) * R

R

=

96°C/W

θJA

θJA

θJA

T - T

= P * R

(t)

A

J

P(pk)

0.1

0.3

1

4

10

30

60

100

200

500

1000

2000

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

f = 1 MHz

V

= 0V

GS

Coss

Ciss

Crss

0

5

10

15

20

0

2

4

6

8

10

Q

, GATE CHARGE (nC)

g

I

= 10A

D

V

= 5.0V

DS

20V

10V

0.1

1

3

5

10

30

50

0.01

0.1

1

5

20

50

100

200

V

, DRAIN-SOURCE VOLTAGE (V))

DS

100

µs

1m

s

10m

s

DC

R

Lim

it

DS

(O

N)

V

= 10V

SINGLE PULSE

R

= 3.2 C/W

T

= 25 °C

GS

A

θJC

o

10µ

s

1µs