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MCP6S92E-SN bảng dữ liệu(PDF) 10 Page - Microchip Technology |
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10 / 40 page 2004 Microchip Technology Inc. DS21908A-page 10 MCP6S91/2/3 2.0 TYPICAL PERFORMANCE CURVES Note: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VREF =VSS, G = +1 V/V, Input = CH0 = (0.3V)/G, CH1 = 0.3V, RL =10kΩ to VDD/2 and CL = 60 pF. FIGURE 2-1: DC Gain Error, G = +1. FIGURE 2-2: DC Gain Error, G ≥ +2. FIGURE 2-3: Ladder Resistance Drift. FIGURE 2-4: DC Gain Drift, G = +1. FIGURE 2-5: DC Gain Drift, G ≥ +2. FIGURE 2-6: Crosstalk vs. Frequency (circuit in Figure 6-4). Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 0% 2% 4% 6% 8% 10% 12% 14% 16% 18% 20% 22% 24% DC Gain Error (%) 600 Samples G = +1 0% 2% 4% 6% 8% 10% 12% 14% 16% 18% DC Gain Error (%) 600 Samples G ≥ +2 0% 2% 4% 6% 8% 10% 12% 14% 16% Ladder Resistance Drift (%/°C) 597 Samples T A = -40 to +125°C 0% 5% 10% 15% 20% 25% 30% 35% DC Gain Drift (%/°C) 600 Samples G = +1 T A = -40 to +125°C 0% 2% 4% 6% 8% 10% 12% 14% 16% 18% 20% 22% 24% 26% DC Gain Drift (%/°C) 600 Samples G ≥ +2 T A = -40 to +125°C -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 1.E+05 1.E+06 1.E+07 1.E+08 Frequency (Hz) V DD = 5.0V G = +32 V/V CH0 selected R S = 1 kΩ RS = 0 Ω R S = 100 Ω RS = 10 kΩ 100k 100M 10M 1M |
Số phần tương tự - MCP6S92E-SN |
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Mô tả tương tự - MCP6S92E-SN |
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