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1 / 3 page 1SV277 2007-11-01 1 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio • High capacitance ratio: C1 V/C4 V = 2.3 (typ.) • Low series resistance: rs = 0.42 Ω (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage VR 10 V Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage VR IR = 1 μA 10 ⎯ ⎯ V Reverse current IR VR = 10 V ⎯ ⎯ 3 nA Capacitance C1 V VR = 1 V, f = 1 MHz 4.0 4.5 4.9 pF Capacitance C4 V VR = 4 V, f = 1 MHz 1.85 2.0 2.35 pF Capacitance ratio C1 V/C4 V ⎯ 2.0 2.3 ⎯ ⎯ Series resistance rs VR = 1 V, f = 470 MHz ⎯ 0.42 0.55 Ω Marking Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) |
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