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FDC6561 bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor |
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FDC6561 bảng dữ liệu(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page April 1999 FDC6561AN Dual N-Channel Logic Level PowerTrench TM MOSFET General Description Features Absolute Maximum Ratings T A = 25°C unless otherwise note Symbol Parameter Ratings Units V DSS Drain-Source Voltage 30 V V GSS Gate-Source Voltage - Continuous ±20 V I D Drain Current - Continuous 2.5 A - Pulsed 10 P D Maximum Power Dissipation (Note 1a) 0.96 W (Note 1b) 0.9 (Note 1c) 0.7 T J,TSTG Operating and Storage Temperature Range -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 130 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W FDC6561AN Rev.C These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems. 2.5 A, 30 V. R DS(ON) = 0.095 Ω @ V GS = 10 V R DS(ON) = 0.145 Ω @ V GS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOT TM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). SOIC-16 SOT-23 SuperSOT TM-8 SO-8 SOT-223 SuperSOT TM-6 D1 S2 G1 D2 S1 G2 SuperSOT -6 TM pin 1 .561 1 5 3 2 6 4 © 1999 Fairchild Semiconductor Corporation |
Số phần tương tự - FDC6561 |
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Mô tả tương tự - FDC6561 |
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