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FDC6561AN bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor |
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FDC6561AN bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV DSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 µA 30 V ∆BV DSS/∆TJ Breakdown Voltage Temp. Coefficient I D = 250 µA, Referenced to 25 oC 23.6 mV/ oC I DSS Zero Gate Voltage Drain Current V DS = 24 V, VGS = 0 V 1 µA T J = 55 oC 10 µA I GSSF Gate - Body Leakage, Forward V GS = 20 V, VDS = 0 V 100 nA I GSSR Gate - Body Leakage, Reverse V GS = -20 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) V GS(th) Gate Threshold Voltage V DS = VGS, ID = 250 µA 1 1.8 3 V ∆V GS(th)/∆TJ Gate Threshold VoltageTemp.Coefficient I D = 250 µA, Referenced to 25 oC -4 mV/ oC R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, ID = 2.5 A 0.082 0.095 Ω T J = 125 oC 0.122 0.152 V GS = 4.5 V, ID = 2.0 A 0.113 0.145 I D(on) On-State Drain Current V GS = 10 V, VDS = 5 V 10 A g FS Forward Transconductance V DS = 5 V, ID = 2.5 A 5 S DYNAMIC CHARACTERISTICS C iss Input Capacitance V DS = 15 V, VGS = 0 V, 220 pF C oss Output Capacitance f = 1.0 MHz 50 pF C rss Reverse Transfer Capacitance 25 pF SWITCHING CHARACTERISTICS (Note 2) t D(on) Turn - On Delay Time V DD = 5 V, ID = 1 A, 6 12 ns t r Turn - On Rise Time V GS = 10 V, RGEN = 6 Ω 10 18 ns t D(off) Turn - Off Delay Time 12 22 ns t f Turn - Off Fall Time 2 6 ns Q g Total Gate Charge V DS = 15 V, ID = 2.5 A 2.3 3.2 nC Q gs Gate-Source Charge V GS = 5 V 0.7 1 nC Q gd Gate-Drain Charge 0.9 1.3 nC DRAIN-SOURCE DIODE CHARACTERISTICS I S Continuous Source Diode Current 0.75 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, IS = 0.75 A (Note 2) 0.78 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDC6561AN Rev.C c. 180 OC/W on a minimum pad. b. 140 OC/W on a 0.005 in2 pad of 2oz copper. a. 130 OC/W on a 0.125 in2 pad of 2oz copper. |
Số phần tương tự - FDC6561AN |
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Mô tả tương tự - FDC6561AN |
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