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FDC634P bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor

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Giải thích chi tiết về linh kiện  P-Channel Enhancement Mode Field Effect Transistor
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FDC634P bảng dữ liệu(HTML) 2 Page - Fairchild Semiconductor

  FDC634P Datasheet HTML 1Page - Fairchild Semiconductor FDC634P Datasheet HTML 2Page - Fairchild Semiconductor FDC634P Datasheet HTML 3Page - Fairchild Semiconductor FDC634P Datasheet HTML 4Page - Fairchild Semiconductor  
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ELECTRICAL CHARACTERISTICS (T
A = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS = 0 V, ID = -250 µA
-20
V
BV
DSS/TJ
Breakdown Voltage Temp. Coefficient
I
D = -250 µA, Referenced to 25
o C
-29
mV /
oC
I
DSS
Zero Gate Voltage Drain Current
V
DS = -16 V, VGS = 0 V
-1
µA
T
J = 55
oC
-10
µA
I
GSSF
Gate - Body Leakage, Forward
V
GS = 8 V, VDS = 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS = -8 V, VDS= 0 V
-100
nA
ON CHARACTERISTICS (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS = VGS, ID = -250 µA
-0.4
-0.6
-1
V
V
GS(th)/TJ
Gate Threshold VoltageTemp.Coefficient
I
D = -250 µA, Referenced to 25
o C
2.1
mV /
oC
R
DS(ON)
Static Drain-Source On-Resistance
V
GS = -4.5 V, ID = -3.5 A
0.07
0.08
T
J = 125
oC
0.099
0.13
V
GS = -2.5 V, ID= -3.1 A
0.093
0.11
I
D(on)
On-State Drain Current
V
GS = -4.5 V, VDS = -5 V
-10
A
g
FS
Forward Transconductance
V
DS = -10 V, ID= -3.5 A
6.5
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS = -10 V, VGS = 0 V,
665
pF
C
oss
Output Capacitance
f = 1.0 MHz
270
pF
C
rss
Reverse Transfer Capacitance
70
pF
SWITCHING CHARACTERISTICS (Note 2)
t
D(on)
Turn - On Delay Time
V
DD = -5 V, ID = -1 A,
8
16
ns
t
r
Turn - On Rise Time
V
GS = -4.5 V, RGEN = 6
24
38
ns
t
D(off)
Turn - Off Delay Time
50
80
ns
t
f
Turn - Off Fall Time
29
45
ns
Q
g
Total Gate Charge
V
DS = -5 V, ID = -3.5 A,
9.5
13
nC
Q
gs
Gate-Source Charge
V
GS = -4.5 V
1.3
nC
Q
gd
Gate-Drain Charge
2.2
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Continuous Source Diode Current
-1.3
A
V
SD
Drain-Source Diode Forward Voltage
V
GS = 0 V, IS = -1.3 A
(Note 2)
-0.75
-1.2
V
T
J = 125
oC
-0.6
-1
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
a. 78
oC/W when mounted on a 1 in2 pad of 2oz Cu in FR-4 board.
b. 156
oC/W when mounted on a minimum pad of 2oz Cu in FR-4 board.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDC634P Rev.C


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