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FDC6320C bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor

tên linh kiện FDC6320C
Giải thích chi tiết về linh kiện  Dual N & P Channel , Digital FET
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nhà sản xuất  FAIRCHILD [Fairchild Semiconductor]
Trang chủ  http://www.fairchildsemi.com
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October 1997
FDC6320C
Dual N & P Channel , Digital FET
General Description
Features
Absolute Maximum Ratings T
A = 25
oC unless other wise noted
Symbol
Parameter
N-Channel
P-Channel
Units
V
DSS, VCC
Drain-Source Voltage, Power Supply Voltage
25
-25
V
V
GSS, VIN
Gate-Source Voltage,
8
-8
V
I
D, IO
Drain/Output Current
- Continuous
0.22
-0.12
A
- Pulsed
0.5
-0.5
P
D
Maximum Power Dissipation
(Note 1a)
0.9
W
(Note 1b)
0.7
T
J,TSTG
Operating and Storage Tempature Ranger
-55 to 150
°C
ESD
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
6
kV
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
140
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
60
°C/W
FDC6320C.Rev C
N-Ch 25 V, 0.22 A, R
DS(ON) = 5 @ VGS= 2.7 V.
P-Ch 25 V, -0.12 A, R
DS(ON) = 13 @ VGS= -2.7 V.
Very low level gate drive requirements allowing direct
operation in 3 V circuits. V
GS(th) < 1.5 V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace NPN & PNP digital transistors.
These dual N & P Channel logic level enhancement mode field
effec transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance.
The device is an improved design especially for low voltage
applications as a replacement for bipolar digital transistors in
load switching applications. Since bias resistors are not
required, this dual digital FET can replace several digital
transistors with difference bias resistors.
SOT-23
SuperSOT
TM-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM-6
1
5
3
2
6
4
© 1997 Fairchild Semiconductor Corporation


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