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FDC6305N bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor |
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FDC6305N bảng dữ liệu(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page FDC6305N, Rev. C FDC6305N Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Applications • Load switch • DC/DC converter • Motor driving Features • 2.7 A, 20 V. R DS(ON) = 0.08 Ω @ VGS = 4.5 V R DS(ON) = 0.12 Ω @ VGS = 2.5 V • Low gate charge (3.5nC typical). • Fast switching speed. • High performance trench technology for extremely low R DS(ON). • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). ©1999 Fairchild Semiconductor Corporation Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±8V ID Drain Current - Continuous (Note 1a) 2.7 A - Pulsed 8 PD Power Dissipation for Single Operation (Note 1a) 0.96 W (Note 1b) 0.9 (Note 1c) 0.7 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 130 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 60 °C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity .305 FDC6305N 7’’ 8mm 3000 units March 1999 1 5 3 2 6 4 D1 S2 G1 D2 S1 G2 SuperSOT -6 TM |
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