STP24N60M2 datasheet(3/22 Pages) STMICROELECTRONICS

tên linh kiện	STP24N60M2

Giải thích chi tiết về linh kiện	N-channel 600 V, 0.168 廓 typ., 18 A MDmesh II Plus??low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages

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DocID023964 Rev 4

3/22

STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2

Electrical ratings

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

18

A

ID

Drain current (continuous) at TC = 100 °C

12

A

IDM

(1)

1.

Pulse width limited by safe operating area.

Drain current (pulsed)

72

A

PTOT

Total dissipation at TC = 25 °C

150

W

dv/dt (2)

2.

ISD ≤ 18 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V.

Peak diode recovery voltage slope

15

V/ns

dv/dt(3)

3.

VDS ≤ 480 V

MOSFET dv/dt ruggedness

50

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Tj

Max. operating junction temperature

Table 3. Thermal data

Symbol

Parameter

Value

Unit

D2PAK

I2PAK

TO-220

TO-247

Rthj-case Thermal resistance junction-case max

0.83

°C/W

Rthj-pcb

Thermal resistance junction-pcb max(1)

1.

When mounted on 1 inch² FR-4, 2 Oz copper board

30

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

50

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax )

3.5

A

EAS

Single pulse avalanche energy (starting

Tj=25°C, ID= IAR; VDD=50)

180

mJ

Số phần tương tự - STP24N60M2

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STP24N60M2	1Mb / 22P	N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK

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Mô tả tương tự - STP24N60M2

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STB24N60M2	1Mb / 22P	N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK
	STFI40N60M2	1Mb / 21P	N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
	STF24N60M2	1Mb / 14P	N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in TO-220FP and I2PAKFP packages
	STF40N60M2	1Mb / 22P	N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
	STP26NM60N	1Mb / 24P	N-channel 600 V, 0.135 廓 typ., 20 A MDmesh??II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
	STF20N65M5	1Mb / 21P	N-channel 650 V, 0.160 廓 typ., 18 A MDmesh??V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages February 2013 Rev 2
	STW33N60M2	1Mb / 20P	N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages November 2013 Rev 2
	STP13N60M2	1Mb / 18P	N-channel 600 V, 0.35 廓 typ., 11 A MDmesh II Plus??low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages February 2014 Rev 5
	STB24N60DM2	1Mb / 21P	N-channel 600 V, 0.175 (ohm) typ., 18 A FDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages March 2014 Rev 3
	STF26NM60N	1Mb / 23P	N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

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