TIPL760A datasheet(2/5 Pages) BOURNS

tên linh kiện	TIPL760A

Giải thích chi tiết về linh kiện	NPN SILICON POWER TRANSISTORS

Download	5 Pages

Scroll/Zoom	100%

nhà sản xuất	BOURNS [Bourns Electronic Solutions]

Trang chủ	http://www.bourns.com

Logo

2 / 5 page

TIPL760, TIPL760A

NPN SILICON POWER TRANSISTORS

2

PRODU CT

INFORMA TION

AUGUST 1978 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VCEO(sus)

Collector-emitter

sustaining voltage

IC =

10 mA

L = 25 mH

(see Note 2)

TIPL760

TIPL760A

400

450

V

ICES

Collector-emitter

cut-off current

VCE = 850 V

VCE = 1000 V

VCE = 850 V

VCE = 1000 V

VBE =0

TC = 100°C

TIPL760

TIPL760A

TIPL760

TIPL760A

50

200

µA

ICEO

Collector cut-off

current

VCE = 400 V

VCE = 450 V

IB =0

TIPL760

TIPL760A

50

µA

IEBO

Emitter cut-off

current

VEB =

10 V

IC =0

1

mA

hFE

Forward current

transfer ratio

VCE =

5 V

IC = 0.5 A

(see Notes 3 and 4)

20

60

VCE(sat)

Collector-emitter

saturation voltage

IB =

0.5 A

IB =

0.8 A

IB =

0.8 A

IC = 2.5A

IC =

4A

IC =

4A

(see Notes 3 and 4)

TC = 100°C

1.0

2.5

5.0

V

VBE(sat)

Base-emitter

saturation voltage

IB =

0.5 A

IB =

0.8 A

IB =

0.8 A

IC = 2.5A

IC =

4A

IC =

4A

(see Notes 3 and 4)

TC = 100°C

1.2

1.4

1.3

V

ft

Current gain

bandwidth product

VCE =

10 V

IC = 0.5 A

f =

1 MHz

12

MHz

Cob

Output capacitance

VCB =

20 V

IE = 0

f = 0.1 MHz

110

pF

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

1.56

°C/W

inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS †

MIN

TYP

MAX

UNIT

tsv

Voltage storage time

IC = 4 A

VBE(off) = -5 V

IB(on) = 0.8 A

(see Figures 1 and 2)

2.5

µs

trv

Voltage rise time

300

ns

tfi

Current fall time

250

ns

tti

Current tail time

150

ns

txo

Cross over time

400

ns

tsv

Voltage storage time

IC = 4 A

VBE(off) = -5 V

IB(on) = 0.8 A

TC = 100°C

(see Figures 1 and 2)

3µs

trv

Voltage rise time

500

ns

tfi

Current fall time

250

ns

tti

Current tail time

150

ns

txo

Cross over time

750

ns

Số phần tương tự - TIPL760A

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Power Innovations Ltd	TIPL760A	161Kb / 7P	NPN SILICON POWER TRANSISTORS

More results

Mô tả tương tự - TIPL760A

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Motorola, Inc	MJ8504	416Kb / 6P	NPN SILICON POWER TRANSISTORS
Texas Instruments	TIPL751	224Kb / 7P	[Old version datasheet] NPN SILICON POWER TRANSISTORS
Transys Electronics	TIPL765	805Kb / 6P	NPN SILICON POWER TRANSISTORS
Siemens Semiconductor G...	BU208	100Kb / 4P	NPN SILICON POWER TRANSISTORS
	BUX80	117Kb / 5P	NPN SILICON POWER TRANSISTORS
	BUX84	106Kb / 5P	NPN SILICON POWER TRANSISTORS
Boca Semiconductor Corp...	2N6676	144Kb / 3P	NPN SILICON POWER TRANSISTORS
ON Semiconductor	TIP47	199Kb / 6P	POWER TRANSISTORS NPN SILICON 1995 REV 1
	2N5301	251Kb / 6P	POWER TRANSISTORS NPN SILICON 1995
	2N5655	176Kb / 4P	POWER TRANSISTORS NPN SILICON April, 2002 ??Rev. 7
	2N6338	155Kb / 4P	POWER TRANSISTORS NPN SILICON May, 2001 ??Rev. 10

More results

TIPL760A bảng dữ liệu(PDF) 2 Page - Bourns Electronic Solutions

TIPL760A bảng dữ liệu(HTML) 2 Page - Bourns Electronic Solutions

Số phần tương tự - TIPL760A

Mô tả tương tự - TIPL760A

Html Pages

1 2 3 4 5

bảng dữ liệu tải về

Link URL