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TS420-700B bảng dữ liệu(PDF) 4 Page - STMicroelectronics

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Characteristics
TS420
4/11
Doc ID 5203 Rev 4
Figure 1.
Maximum average power
dissipation versus average on-state
current
Figure 2.
Average and DC on-state current
versus case temperature
0.00.5
1.0
1.5
2.0
2.53.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
P(W)
I
(A)
T(AV)
α = 180°
360°
α
0
25
50
75
100
125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
I
(A)
T(AV)
T
(°C)
case
α = 180°
DC
Figure 3.
Average and DC on-state current
versus ambient temperature
(DPAK)
Figure 4.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (DPAK)
0
25
50
75
100
125
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
(A)
T(AV)
T
(°C)
amb
α = 180°
α = 180°
DPAK (S = 0.5cm )
2
IPAK
DC
DC
Device mounted on FR4 with
recommended pad layout
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
1E-3
1E-2
1E-1
1E+0
K=[Z
/R
]
th(j-c)
th(j-c)
t (s)
p
Zth(j-c)
Zth(j-a)
Device mounted on FR4 with
recommended pad layout
Figure 5.
Relative variation of gate trigger
current and holding current versus
junction temperature
Figure 6.
Relative variation of holding
current versus gate-cathode
resistance (typical values)
-40
-20
0
20
40
60
80
100
120
140
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
T (°C)
j
I,I ,I [T ] /
GT H L
j
I
,I ,I [T =25°C]
GT H L
j
IGT
IH and I
R
= 1k
L
GK
Ω
R(k )
GK
Ω
I [R
] / I [
=1k ]
HGK
H
Ω
RGK
Tj = 25°C
5
4
1E-2
1E-1
1E+0
1E+1
3
2
1
0


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