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STB34NM60ND bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247
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This is information on a product in full production.
October 2012
Doc ID 18099 Rev 5
1/22
22
STB34NM60ND, STF34NM60ND,
STP34NM60ND, STW34NM60ND
N-channel 600 V, 0.097
Ω typ., 29 A FDmesh™ II Power MOSFET
(with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247
Datasheet — production data
Features
The world’s best RDS(on) in TO-220 amongst
the fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities
Applications
Switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Figure 1.
Internal schematic diagram
Order codes
VDSS @TJ
max.
RDS(on)
max.
ID
STB34NM60ND
STF34NM60ND
STP34NM60ND
STW34NM60ND
650 V
0.110
Ω
29 A
1
2
3
1
2
3
TAB
TO-247
TO-220
TO-220FP
1
2
3
1
3
TAB
D2PAK
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB34NM60ND
STF34NM60ND
STP34NM60ND
STW34NM60ND
34NM60ND
34NM60ND
34NM60ND
34NM60ND
D2PAK
TO-220FP
TO-220
TO-247
Tape and reel
Tube
Tube
Tube
www.st.com


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