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AM1430N bảng dữ liệu(PDF) 2 Page - Analog Power

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Giải thích chi tiết về linh kiện  N-Channel 30V (D-S) MOSFET
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AM1430N bảng dữ liệu(HTML) 2 Page - Analog Power

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AM1430N
Analog Power
PRELIMINARY
Publication Order Number:
DS-AM1430_A
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
Min Typ Max
Gate-Threshold Voltage
VGS(th)
VDS =VGS, ID =250uA
1
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS=±20 V
±100
nA
VDS =24V, VGS =0V
1
VDS =24V, VGS= 0 V, TJ = 55
oC
10
On-State Drain Current
A
ID(on)
VDS =5V, VGS =4.5V
10
A
VGS =10V, ID =4.3A
58
VGS =4.5V, ID =3.6A
82
Forward Tranconductance
A
gfs
VDS =10V, ID =4.3A
11.3
S
Diode Forward Voltage
VSD
IS =1.6A, VGS =0V
0.75
V
Total Gate Charge
Qg
7.5
Gate-Source Charge
Qgs
0.6
Gate-Drain Charge
Qgd
1.0
Input Capacitance
Ciss
720
Output Capacitance
Coss
165
Reverse Transfer Capacitance
Crss
60
Turn-On Delay Time
td(on)
8
Rise Time
tr
24
Turn-Off Delay Time
td(off)
35
Fall-Time
tf
10
VDD =10V, RL =15Ω, ID =1A,
VGEN=4.5V
ns
VDS =10V, VGS =4.5V, ID =4.3A
nC
VDS =15V, VGS =0V,
f
=1MHz
pF
Drain-Source On-Resistance
A
rDS(on)
mΩ
Dynamic
b
Static
Zero Gate Voltage Drain Current
IDSS
uA
SPECIFICATIONS(TA =25
oCUNLESSOTHERWISENOTED)
Parameter
Symbol
Test Conditions
Limits
Unit


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