D45H8

PNP Power Amplifier

This device is designed for power amplifier, regulator and switching

circuits where speed is important. Sourced from Process 5Q.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

60

V

Collector Current - Continuous

8.0

A

Operating and Storage Junction Temperature Range

-55 to +150

°C

TO-220

B

C

E

B

C

C

SOT-223

E

NZT45H8

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

D45H8

*NZT45H8

Total Device Dissipation

Derate above 25

°C

60

480

1.5

12

W

mW/

°C

Thermal Resistance, Junction to Case

2.1

°C/W

Thermal Resistance, Junction to Ambient

62.5

83.3

°C/W

Discrete POWER & Signal

Technologies

© 1997 Fairchild Semiconductor Corporation