BC237 datasheet(1/4 Pages) FAIRCHILD

tên linh kiện	BC237

Giải thích chi tiết về linh kiện	NPN EPITAXIAL SILICON TRANSISTOR

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Rev. A2, August 2002

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings T

a=25°C unless otherwise noted

Electrical Characteristics T

a=25°C unless otherwise noted

hFE Classification

Symbol

Parameter

Value

Units

VCES

Collector-Emitter Voltage

: BC237

: BC238/239

50

30

V

VCEO

Collector-Emitter Voltage

: BC237

: BC238/239

45

25

V

VEBO

Emitter-Base Voltage

: BC237

: BC238/239

6

5

V

IC

Collector Current (DC)

100

mA

PC

Collector Power Dissipation

500

mW

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

-55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVCEO

Collector-Emitter Breakdown Voltage

: BC237

: BC238/239

IC=2mA, IB=0

45

25

V

BVEBO

Emitter Base Breakdown Voltage

: BC237

: BC238/239

IE=1µA, IC=0

6

5

V

ICES

Collector Cut-off Current

: BC237

: BC238/239

VCE=50V, VBE=0

VCE=30V, VBE=0

0.2

15

nA

hFE

DC Current Gain

VCE=5V, IC=2mA

120

800

VCE (sat)

Collector-Emitter Saturation Voltage

IC=10mA, IB=0.5mA

IC=100mA, IB=5mA

0.07

0.2

0.6

V

VBE (sat)

Collector-Base Saturation Voltage

IC=10mA, IB=0.5mA

IC=100mA, IB=5mA

0.73

0.87

0.83

1.05

V

VBE (on)

Base-Emitter On Voltage

VCE=5V, IC=2mA

0.55

0.62

0.7

V

fT

Current Gain Bandwidth Product

VCE=3V, IC=0.5mA, f=100MHz

VCE=5V, IC=10mA, f=100MHz

150

85

250

MHz

Cob

Output Capacitance

VCB=10V, IE=0, f=1MHz

3.5

6

pF

Cib

Input Base Capacitance

VEB=0.5V, IC=0, f=1MHz

8

pF

NF

Noise Figure

: BC237/238

: BC239

VCE=5V, IC=0.2mA,

f=1KHz RG=2KΩ

VCE=5V, IC=0.2mA

RG=2KΩ, f=30~15KHz

210

4

dB

Classification

A

B

C

hFE

120 ~ 220

180 ~ 460

380 ~ 800

BC237/238/239

Switching and Amplifier Applications

• Low Noise: BC239

1. Collector 2. Base 3. Emitter

TO-92

1

Số phần tương tự - BC237

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Motorola, Inc	BC237	112Kb / 4P	Amplifier Transistors
Jiangsu Changjiang Elec...	BC237	1Mb / 4P	TO-92 Plastic-Encapsulate Transistors
ON Semiconductor	BC237	83Kb / 4P	Amplifier Transistors(NPN Silicon) 1996 REV 1
Jiangsu Changjiang Elec...	BC237	1Mb / 4P	TO-92 Plastic-Encapsulate Transistors
NXP Semiconductors	BC237	51Kb / 8P	NPN general purpose transistors 1997 Sep 04

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Mô tả tương tự - BC237

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