ACE8628B datasheet(2/7 Pages) ACE

tên linh kiện	ACE8628B

Giải thích chi tiết về linh kiện	Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

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ACE8628B

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

VER 1.2

2

Ordering information

ACE8628B XX + H

Electrical Characteristics

TA=25℃, unless otherwise noted.

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V, ID=250 uA

20

V

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

2.5

10

uA

Zero Gate Voltage Drain Current

IDSS

VDS=20V, VGS=0V

1

uA

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=250uA

0.4

0.51

1

V

Drain-Source On-Resistance

RDS(ON)

VGS=4.5V, ID=5A

12.1

14

m

Ω

VGS=4V, ID=5A

12.6

15

VGS=3.1V, ID=5A

13.5

17.5

VGS=2.5V, ID=2.5A

14.6

21

Forward Transconductance

gFS

VDS=5V, ID=8A

36

S

Diode Forward Voltage

VSD

ISD=1A, VGS=0V

0.63

1

V

Maximum Body-Dode

Continuous Current

IS

2.4

A

Switching

Total Gate Charge

Qg

VGS=4.5V, VDS=10V, ID=8A

17.9

nC

Gate-Source Charge

Qgs

4.1

Gate-Drain Charge

Qgd

5.6

Turn-On Time

td(on)

VGS=5V, RL=1.5Ω, VDS=10V,

RGEN=3Ω

6.2

12.4

nS

tr

12.7

25.4

Turn-Off Time

td(off)

51.7

103.4

tf

16

32

Dynamic

Input Capacitance

Ciss

VGS=0V, VDS=10V, f=1MHz

1810

pF

Output Capacitance

Coss

232

REVERSE Transfer

Capacitance

Crss

200

NN : DFN3*3-8L

Pb - free

Halogen - free

Số phần tương tự - ACE8628B

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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Mô tả tương tự - ACE8628B

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