STW26NM60N datasheet(3/23 Pages) STMICROELECTRONICS

tên linh kiện	STW26NM60N

Giải thích chi tiết về linh kiện	N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

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STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N

Electrical ratings

Doc ID 15642 Rev 5

3/23

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

D²PAK, I²PAK,

TO-220, TO-247

TO-220FP

VDS

Drain-source voltage

600

V

VGS

Gate-source voltage

± 25

V

ID

Drain current (continuous) at TC = 25 °C

20

20(1)

1.

Limited by maximum junction temperature.

A

ID

Drain current (continuous) at TC = 100 °C

12.6

12.6 (1)

A

IDM

(2)

2.

Pulse width limited by safe operating area.

Drain current (pulsed)

80

80(1)

A

PTOT

Total dissipation at TC = 25 °C

140

35

W

Derating factor

1.12

0.28

W/°C

dv/dt (3)

3.

ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDSpeak ≤V(BR)DSS, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

15

V/ns

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t=1 s;TC=25 °C)

2500

V

Tstg

Storage temperature

–55 to 150

°C

Tj

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-247 TO-220

I²PAK D²PAK TO-220FP

Rthj-case

Thermal resistance junction-

case max

0.89

3.6

°C/W

Rthj-amb

Thermal resistance junction-

ambient max

50

62.5

°C/W

Rthj-pcb

(1)

1.

When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.

Thermal resistance junction-pcb

max

30

°C/W

Số phần tương tự - STW26NM60N

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Inchange Semiconductor ...	STW26NM60N	398Kb / 2P	isc N-Channel MOSFET Transistor
STMicroelectronics	STW26NM60N-H	681Kb / 12P	N-channel 600 V, 0.135 Ω, 20 A TO-247 MDmesh™ II Power MOSFET October 2009
STMicroelectronics	STW26NM60ND	1Mb / 23P	Low input capacitance and gate charge
Inchange Semiconductor ...	STW26NM60ND	398Kb / 2P	isc N-Channel MOSFET Transistor

More results

Mô tả tương tự - STW26NM60N

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STP26NM60N	1Mb / 24P	N-channel 600 V, 0.135 廓 typ., 20 A MDmesh??II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
	STP13NM60N	989Kb / 21P	N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 packages
	STB30NM60N	768Kb / 18P	N-channel 600 V, 0.1 廓, 25 A, MDmesh??II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
	STF18NM60N	1Mb / 21P	N-channel 600 V, 0.26 廓 typ., 13 A MDmesh??II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247
	STP18NM60N	1Mb / 21P	N-channel 600 V, 0.26 廓 typ., 13 A MDmesh??II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 October 2012 Rev 4
	STB25NM60NX	578Kb / 18P	N-channel 600 V, 0.130 廓 , 21 A, MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
	STW33N60M2	1Mb / 20P	N-channel 600 V, 0.108 typ., 26 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages November 2013 Rev 2
	STF26NM60N-H	707Kb / 12P	N-channel 600 V, 0.135 ?? 20 A MDmesh??II Power MOSFET in TO-220FP January 2010 Rev 1
	STP24N60M2	1Mb / 22P	N-channel 600 V, 0.168 廓 typ., 18 A MDmesh II Plus??low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
	STB18N60M2	861Kb / 27P	N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D2PAK,I2PAK, TO-220 and TO-247 packages DS9714 - Rev 4 - November 2018

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