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SB12H30 bảng dữ liệu(PDF) 1 Page - Diotec Semiconductor

tên linh kiện SB12H30
Giải thích chi tiết về linh kiện  High temperature schottky barrier diodes
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nhà sản xuất  DIOTEC [Diotec Semiconductor]
Trang chủ  http://www.diotec.com
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SB12H30 bảng dữ liệu(HTML) 1 Page - Diotec Semiconductor

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SB12H30 ... SB12H40
SB12H30 ... SB12H40
High temperature schottky barrier diodes
Hochtemperatur-Schottky-Dioden
Version 2013-02-25
Dimensions - Maße [mm]
Nominal current
Nennstrom
12 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
30...40 V
Plastic case
Kunststoffgehäuse
Ø 5.4 x 7.5 [mm]
Weight approx.
Gewicht ca.
1.0 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
Forward voltage
Durchlass-Spannung
VF [V] 1)
IF = 5 A
IF = 12 A
SB12H30
30
30
< 0.51
< 0.59
SB12H40
40
40
< 0.51
< 0.59
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 50°C
IFAV
12 A2)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
55 A 2)
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
TA = 25°C
IFSM
250 A
Rating for fusing – Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
312 A2s
Junction temperature – Sperrschichttemperatur
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
Tj
Tj
-50...+175°C
≤ 200°C
Storage temperature – Lagerungstemperatur
TS
-50...+175°C
1
Tj = 25°C
2
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø
±0.05
1.2
Ø
±0.1
5.4


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