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SB12H30 bảng dữ liệu(PDF) 1 Page - Diotec Semiconductor |
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SB12H30 bảng dữ liệu(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page SB12H30 ... SB12H40 SB12H30 ... SB12H40 High temperature schottky barrier diodes Hochtemperatur-Schottky-Dioden Version 2013-02-25 Dimensions - Maße [mm] Nominal current Nennstrom 12 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 30...40 V Plastic case Kunststoffgehäuse Ø 5.4 x 7.5 [mm] Weight approx. Gewicht ca. 1.0 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings Grenzwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Forward voltage Durchlass-Spannung VF [V] 1) IF = 5 A IF = 12 A SB12H30 30 30 < 0.51 < 0.59 SB12H40 40 40 < 0.51 < 0.59 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TA = 50°C IFAV 12 A2) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 55 A 2) Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle TA = 25°C IFSM 250 A Rating for fusing – Grenzlastintegral, t < 10 ms TA = 25°C i2t 312 A2s Junction temperature – Sperrschichttemperatur in DC forward mode – bei Gleichstrom-Durchlassbetrieb Tj Tj -50...+175°C ≤ 200°C Storage temperature – Lagerungstemperatur TS -50...+175°C 1 Tj = 25°C 2 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 Ø ±0.05 1.2 Ø ±0.1 5.4 |
Số phần tương tự - SB12H30 |
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Mô tả tương tự - SB12H30 |
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