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STW8T16A bảng dữ liệu(PDF) 4 Page - Seoul Semiconductor

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nhà sản xuất  SEOUL [Seoul Semiconductor]
Trang chủ  http://www.seoulsemicon.com
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SSC- QP- 7- 07- 24 (Rev.00)
Rev.04
Rev.04
December
December 2011
2011
www.seoulsemicon.com
www.seoulsemicon.com
3. Electro-Optical characteristics
Cd
-
6.4
-
IF=60mA
Iv
Luminous Intensity*
[1]
(2,600~3,700 K)
ºC/W
-
22
-
IF=60mA
RthJS
Thermal resistance
[3]
K
7,000
-
2,600
IF=60mA
CCT
Color Correlated Temperature
deg.
-
120
-
IF=60mA
2
Θ
1/2
Viewing Angle
[2]
KV
-
-
5
1.5k
Ω;100pF
ESD (HBM)
-
90
-
80
IF=60mA
Ra
Color Rendering Index*
Cd
-
6.8
-
IF=60mA
Iv
Luminous Intensity*
[1]
(3,700~7,000 K)
V
1.2
0.9
-
IR=5mA
VR
Reverse Voltage
V
3.4
3.1
2.9
IF=60mA
VF
Forward Voltage
Unit
Max.
Typ.
Min.
Condition
Symbol
Parameter
[1] The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned
with the mechanical axis of the LED package.
[2] 2
Θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
[3] Thermal resistance: RthJS (Junction / solder)
* Tolerance : VF :± 0.1V, IV :± 10%, Ra :± 3, x,y :± 0.01
[Note] All measurements were made under the standardized environment of SSC.
125
Tj
Junction Temperature
-40~+100
Tstg
Storage Temperature
-40~+85
Topr
Operating Temperature
mA
90
IF
Forward Current
mW
315
Pd
Power Dissipation
Unit
Value
Symbol
Parameter
[1] Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product.
* LED’s properties might be different from suggested values like above and below tables if operation condition
will be exceeded our parameter range.
2. Absolute maximum ratings [1]


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