1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

UHF/VHF Transistor

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

–20

Vdc

Collector–Base Voltage

VCBO

–20

Vdc

Emitter–Base Voltage

VEBO

–3.0

Vdc

DEVICE MARKING

MMBTH81LT1 = 3D

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,(1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

R

θJA

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

R

θJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

– 55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)

V(BR)CEO

–20

—

—

Vdc

Collector–Base Breakdown Voltage (IC = –10 µAdc, IE = 0)

V(BR)CBO

–20

—

—

Vdc

Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0)

V(BR)EBO

–3.0

—

—

Vdc

Collector Cutoff Current (VCB = –10 Vdc, IE = 0)

ICBO

—

—

–100

nAdc

Emitter Cutoff Current (VEB = –2.0 Vdc, IC = 0)

IEBO

—

—

–100

nAdc

ON CHARACTERISTICS

DC Current Gain (IC = –5.0 mAdc, VCE = –10 Vdc)

hFE

60

—

—

—

Collector–Emitter Saturation Voltage (IC = –5.0 mAdc, IB = –0.5 mAdc)

VCE(sat)

—

—

–0.5

Vdc

Base–Emitter On Voltage (IC = –5.0 mAdc, VCE = –10 Vdc)

VBE(on)

—

—

–0.9

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product

(IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz)

fT

600

—

—

MHz

Collector–Base Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

Ccb

—

—

0.85

pF

Collector–Emitter Capacitance (IB = 0, VCB = –10 Vdc, f = 1.0 MHz)

Cce

—

—

0.65

pF

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MMBTH81LT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MMBTH81LT1

Motorola Preferred Device

1

2

3

CASE 318 – 08, STYLE 6

SOT– 23 (TO – 236AB)

COLLECTOR

3

1

BASE

2

EMITTER