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AD8012AR bảng dữ liệu(PDF) 4 Page - Analog Devices

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AD8012
–4–
REV. A
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation2
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . 0.8 W
microSOIC Package (RM) . . . . . . . . . . . . . . . . . . . . . 0.6 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . .
±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . .
±2.5 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range RM, R . . . . . . –65
°C to +125°C
Operating Temperature Range (A Grade) . .
–40
°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . +300
°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2Specification is for device in free air at +25
°C
8-Lead SOIC Package:
θ
JA = 155
°C/W
8-Lead microSOIC Package:
θ
JA = 200
°C/W
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8012
is limited by the associated rise in junction temperature. The maxi-
mum safe junction temperature for plastic encapsulated devices
is determined by the glass transition temperature of the plastic,
approximately +150
°C. Temporarily exceeding this limit may
cause a shift in parametric performance due to a change in the
stresses exerted on the die by the package. Exceeding a junction
temperature of +175
°C for an extended period can result in de-
vice failure.
The output stage of the AD8012 is designed for maximum load
current capability. As a result, shorting the output to common
can cause the AD8012 to source or sink 500 mA. To ensure
proper operation, it is necessary to observe the maximum power
derating curves. Direct connection of the output to either power
supply rail can destroy the device.
AMBIENT TEMPERATURE – C
–50
0
TJ = +150 C
2.0
1.5
1.0
8-LEAD SOIC
PACKAGE
–40 –30
0
102030
40
5060
70
80 90
8-LEAD
microSOIC
0.5
–20 –10
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature for AD8012
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8012 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ORDERING GUIDE
Temperature
Package
Package
Brand
Model
Range
Description
Options
Code
AD8012AR
–40
°C to +85°C 8-Lead SOIC
SO-8
AD8012AR-REEL
–40
°C to +85°C13” Tape and Reel
SO-8
AD8012AR-REEL7
–40
°C to +85°C7” Tape and Reel
SO-8
AD8012ARM
–40
°C to +85°C 8-Lead microSOIC
RM-08
H6A
AD8012ARM-REEL
–40
°C to +85°C13” Tape and Reel
RM-08
H6A
AD8012ARM-REEL7
–40
°C to +85°C7” Tape and Reel
RM-08
H6A


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