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ST3407S23RG_V2 bảng dữ liệu(PDF) 1 Page - List of Unclassifed Manufacturers |
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1 / 6 page ST3407S23RG P Channel Enhancement Mode MOSFET -3.6A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST3407S23RG 2006. V1 DESCRIPTION ST3407S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L Y: Year Code A: Process Code FEATURE -30V/-4.0A, RDS(ON) = 45m (Typ.) @VGS = -10V -30V/-3.2A, RDS(ON) = 65m @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 3 1 2 D G S 3 1 2 A7YA |
Số phần tương tự - ST3407S23RG_V2 |
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Mô tả tương tự - ST3407S23RG_V2 |
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