ST3407S23RG

P Channel Enhancement Mode MOSFET

-3.6A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST3407S23RG 2006. V1

DESCRIPTION

ST3407S23RG is the P-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as cellular phone and notebook

computer power management, other battery powered circuits, and low in-line power

loss are required. The product is in a very small outline surface mount package.

PIN CONFIGURATION

SOT-23-3L

1.Gate

2.Source

3.Drain

PART MARKING

SOT-23-3L

Y: Year Code

A: Process Code

FEATURE

Super high density cell design for

Exceptional on-resistance and

maximum DC current capability

SOT-23-3L package design

3

1

2

D

G

S

3

1

2

A7YA