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MJ15003 bảng dữ liệu(PDF) 2 Page - Motorola, Inc

tên linh kiện MJ15003
Giải thích chi tiết về linh kiện  20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS
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nhà sản xuất  MOTOROLA [Motorola, Inc]
Trang chủ  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MJ15003 bảng dữ liệu(HTML) 2 Page - Motorola, Inc

  MJ15003 Datasheet HTML 1Page - Motorola, Inc MJ15003 Datasheet HTML 2Page - Motorola, Inc MJ15003 Datasheet HTML 3Page - Motorola, Inc MJ15003 Datasheet HTML 4Page - Motorola, Inc  
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MJ15003 MJ15004
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
140
Vdc
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
100
2
µAdc
mAdc
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
ICEO
250
µAdc
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
IEBO
100
µAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Baised
(VCE = 50 Vdc, t = 1 s (non repetitive))
(VCE = 100 Vdc, t = 1 s (non repetitive))
IS/b
5
1
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 5 Adc, VCE = 2 Vdc)
hFE
25
150
Collector Emitter Saturation Voltage
(IC = 5 Adc, IB = 0.5 Adc)
VCE(sat)
1
Vdc
Base Emitter On Voltage
(IC = 5 Adc, VCE = 2 Vdc)
VBE(on)
2
Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)
fT
2
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
cob
1000
pF
(1) Pulse Test: Pulse Width = 300
µs, Duty Cycle v 2%.
5
Figure 1. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
5
7
10
200
10
2
2
3
50
70 100
20
30
7
20
1
3
0.5
0.2
0.7
0.3
TC = 25°C
15
150
TJ = 200°C
BONDING WIRE LIMITED
THERMAL LIMITATION (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
There are two limitations on the powerhandling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. At high case temper-
atures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown.


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