TC1606

REV5_20070502

Phone: 886-6-5050086

Fax: 886-6-5051602

4 / 4

SCHEMATI

Cgs

Cgd

Cds

Rg

Rd

Rds

Ri

Rs

Gm

T

Lg

Ld

Ls

PARAMETERS

Lg

0.0196 nH

Rs

0.197 Ohm

Rg

0.225 Ohm

Ls

0.005 nH

Cgs

8.87 pF

Cds

1.073 pF

Ri

0.455 Ohm

Rds

31.85 Ohm

Cgd

0.361 pF

Rd

0.315 Ohm

Gm

880.6 mS

Ld

0.004 nH

T

3.9 psec

CHIP HANDLING

DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be

accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290

°C ± 5°C; Handling Tool: Tweezers;

Time: less than 1min.

WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil

(0.018 to 0.025 mm) gold wire. Stage temperature: 220

°C to 250°C; Bond Tip Temperature: 150°C; Bond Force:

20 to 30 gms depending on size of wire and Bond Tip Temperature.

HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised

during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all

stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.