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TC1504N bảng dữ liệu(PDF) 2 Page - Transcom, Inc. |
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TC1504N bảng dữ liệu(HTML) 2 Page - Transcom, Inc. |
2 / 6 page TC1504N REV2_20071108 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 2 / 6 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol Parameter Rating VDS Drain -Source Voltage 12 V VGS Gate-Source Voltage -5 V IDS Drain Current IDSS Pin RF Input Power, CW 28 dBm PT Continuous Dissipation 3.8 W TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C CHIP DIMENSIONS CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290 °C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220 °C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. Gate Pad : 45*45 Drain Pad : 55*55 Units : Micrometer Chip Thickness : 76.2 |
Số phần tương tự - TC1504N |
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Mô tả tương tự - TC1504N |
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