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TC1504N bảng dữ liệu(PDF) 2 Page - Transcom, Inc.

tên linh kiện TC1504N
Giải thích chi tiết về linh kiện  1W High Linearity and High Efficiency GaAs Power FETs
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nhà sản xuất  TRANSCOM [Transcom, Inc.]
Trang chủ  http://www.transcominc.com.tw
Logo TRANSCOM - Transcom, Inc.

TC1504N bảng dữ liệu(HTML) 2 Page - Transcom, Inc.

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TC1504N
REV2_20071108
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
2 / 6
ABSOLUTE MAXIMUM RATINGS (TA=25
°C)
Symbol
Parameter
Rating
VDS
Drain -Source Voltage
12 V
VGS
Gate-Source Voltage
-5 V
IDS
Drain Current
IDSS
Pin
RF Input Power, CW
28 dBm
PT
Continuous Dissipation
3.8 W
TCH
Channel Temperature
175
°C
TSTG
Storage Temperature
- 65
°C to +175 °C
CHIP DIMENSIONS
CHIP HANDLING
DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290
°C ± 5°C; Handling Tool: Tweezers;
Time: less than 1min.
WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil
(0.018 to 0.025 mm) gold wire. Stage temperature: 220
°C to 250°C; Bond Tip Temperature: 150°C; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
Gate Pad : 45*45
Drain Pad : 55*55
Units : Micrometer
Chip Thickness : 76.2


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