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TC1504N bảng dữ liệu(PDF) 1 Page - Transcom, Inc.

tên linh kiện TC1504N
Giải thích chi tiết về linh kiện  1W High Linearity and High Efficiency GaAs Power FETs
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nhà sản xuất  TRANSCOM [Transcom, Inc.]
Trang chủ  http://www.transcominc.com.tw
Logo TRANSCOM - Transcom, Inc.

TC1504N bảng dữ liệu(HTML) 1 Page - Transcom, Inc.

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TC1504N
REV2_20071108
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1 / 6
1W High Linearity and High Efficiency GaAs Power FETs
FEATURES
l 1W Typical Power at 12 GHz
PHOTO ENLARGEMENT
l Linear Power Gain: G
L = 9 dB Typical at 12 GHz
l High Linearity: IP3 = 40 dBm Typical at 12 GHz
l Non-Via Hole Source for Single-Bias Application
l Suitable for High Reliability Application
l Breakdown Voltage: BV
DGO
≥ 13.5 V
l Lg = 0.25
µm, Wg = 2.4 mm
l High Power Added Efficiency: Nominal PAE of 43% at 12 GHz
l Tight Vp ranges control
l High RF input power handling capability
l 100 % DC Tested
DESCRIPTION
The TC1504N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity
and high Power Added Efficiency. The device is processed without via -holes for single-bias applications. The
short gate length enables the device to be used in circuits up to 20GHz. All devices are 100% DC tested to assure
consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
Backside gold plating is compatible with standard AuSn die -attach. Typical application include commercial and
military high performance power amplifiers
.
ELECTRICAL SPECIFICATIONS (TA=25
°C)
Symbol
Conditions
MIN
TYP
MAX UNIT
P1dB
Output Power at 1dB Gain Compression Point ,
f = 12 GHz V
DS = 8 V, IDS = 240 mA
29.5
30
dBm
GL
Linear Power Gain,
f = 12 GHz V
DS = 8 V, IDS = 240 mA
9
dB
IP3
Intercept Point of the 3
rd-order Intermodulation,
f = 12 GHz V
DS =8 V, IDS =240 mA,*PSCL =17 dBm
40
dBm
PAE
Power Added Efficiency at 1dB Compression Power,
f = 12 GHz
43
%
IDSS
Saturated Drain -Source Current at VDS = 2 V, VGS = 0 V
720
mA
gm
Transconductance at VDS = 2 V, VGS = 0 V
520
mS
VP
Pinch-off Voltage at VDS = 2 V, ID = 4.8 mA
-1.7
Volts
BVDGO Drain-Gate Breakdown Voltage at IDGO =1.2 mA
13.5
15
Volts
Rth
Thermal Resistance
12
°C/W
Note:
* PSCL: Output Power of Single Carrier Level.


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