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TC1504N bảng dữ liệu(PDF) 1 Page - Transcom, Inc. |
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TC1504N bảng dữ liệu(HTML) 1 Page - Transcom, Inc. |
1 / 6 page TC1504N REV2_20071108 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1 / 6 1W High Linearity and High Efficiency GaAs Power FETs FEATURES l 1W Typical Power at 12 GHz PHOTO ENLARGEMENT l Linear Power Gain: G L = 9 dB Typical at 12 GHz l High Linearity: IP3 = 40 dBm Typical at 12 GHz l Non-Via Hole Source for Single-Bias Application l Suitable for High Reliability Application l Breakdown Voltage: BV DGO ≥ 13.5 V l Lg = 0.25 µm, Wg = 2.4 mm l High Power Added Efficiency: Nominal PAE of 43% at 12 GHz l Tight Vp ranges control l High RF input power handling capability l 100 % DC Tested DESCRIPTION The TC1504N is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and high Power Added Efficiency. The device is processed without via -holes for single-bias applications. The short gate length enables the device to be used in circuits up to 20GHz. All devices are 100% DC tested to assure consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn die -attach. Typical application include commercial and military high performance power amplifiers . ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol Conditions MIN TYP MAX UNIT P1dB Output Power at 1dB Gain Compression Point , f = 12 GHz V DS = 8 V, IDS = 240 mA 29.5 30 dBm GL Linear Power Gain, f = 12 GHz V DS = 8 V, IDS = 240 mA 9 dB IP3 Intercept Point of the 3 rd-order Intermodulation, f = 12 GHz V DS =8 V, IDS =240 mA,*PSCL =17 dBm 40 dBm PAE Power Added Efficiency at 1dB Compression Power, f = 12 GHz 43 % IDSS Saturated Drain -Source Current at VDS = 2 V, VGS = 0 V 720 mA gm Transconductance at VDS = 2 V, VGS = 0 V 520 mS VP Pinch-off Voltage at VDS = 2 V, ID = 4.8 mA -1.7 Volts BVDGO Drain-Gate Breakdown Voltage at IDGO =1.2 mA 13.5 15 Volts Rth Thermal Resistance 12 °C/W Note: * PSCL: Output Power of Single Carrier Level. |
Số phần tương tự - TC1504N |
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Mô tả tương tự - TC1504N |
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