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STK611-721-E bảng dữ liệu(PDF) 2 Page - Sanyo Semicon Device

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STK611-721-E
No.A1718-2/9
Specifications
Absolute Maximum Ratings
at Tc = 25
°C
Parameter
Symbol
Conditions
Ratings
unit
Supply voltage
VCC
+ to -, surge
< 450V
*1
450
V
Collector-emitter voltage
VDS
+ to U (V, W) or U (V, W) to -
600
V
Output current
IO
+, -, U, V, W terminal current
±2A
Output peak current
Iop
+, -, U, V, W terminal current P.W. = 100
μs
±4A
Pre-driver voltage
VD1, 2, 3, 4
VB1 to U, VB2 to V, VB3 to W, VDD to VSS
*2
20
V
Input signal voltage
VIN
HIN1, 2, 3, LIN1, 2, 3 terminal
0 to 15
V
FAULT/EN terminal voltage
VFAULT
FAULT/EN terminal
20
V
ITRIP terminal voltage
VITRIP
ITRIP terminal
5
V
Maximum power dissipation
Pd
MOSFET/1 channel
16.6
W
Junction temperature
Tj
MOSFET
150
°C
Storage temperature
Tstg
-40 to +125
°C
Operating substrate temperature
Tc
H-IC case temperature
-20 to +100
°C
Tightening torque
A screw part
*3
0.6
N
•m
Reference voltage is “-” terminal = “VSS” terminal voltage unless otherwise specified.
*1 Surge voltage developed by the switching operation due to the wiring inductance between “+” and “-” terminals.
*2 Terminal voltage : VD1=VB1 to U, VD2=VB2 to V, VD3=VB3 to W, VD4=VDD to VSS.
*3 Flatness of the heat-sink should be 0.15mm and below.
Electrical Characteristics
at Tc=25
°C, VD=15V
Parameter
Symbol
Conditions
Test circuit
min
typ
max
unit
Power output section
Drain-Source Leakage current
IDSS
VDS = 600V
Fig.1
0.1
mA
Drain-Source On Resistance
RDS(ON)
ID = 2A
Fig.2
4
Ω
Diode forward voltage
VSD
ID = -2A
Fig.3
1.5
V
Junction to case thermal resistance
θj-c(T)
MOSFET
7.5
°C/W
Control (Pre-driver) section
VD1, 2, 3 = 15V
0.05
0.2
Pre-driver power dissipation
ID
VD4 = 15V
Fig.4
1.4
4.0
mA
Input ON threshold voltage
Vinth(on)
1.5
2.1
2.5
V
Input OFF threshold voltage
Vinth(off)
HIN1, HIN2, HIN3, LIN1, LIN2,
LIN3 to VSS
0.8
1.3
1.5
V
FAULT/EN clearness delay time
FLTCLR
After each protection operation
ending
8
ms
Protection section
Pre-drive power supply
low voltage protection voltage
UVLO
8
9.8
V
Resistance for substrate temperature
monitors
Rt
Resistance between TH and
VSS terminals
90
100
110
k
Ω
Fault/EN terminal input current
IOSD
VFault = 0.15V
2
mA
ITRIP threshold voltage
VITRIP
0.41
0.465
0.52
V
tON
0.8
Switching time
tOFF
IO = 2A
Inductive load
Fig.5
1.5
μs
Reference voltage is “-” terminal = “Vss” terminal voltage unless otherwise specified.


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