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STK611-721-E bảng dữ liệu(PDF) 2 Page - Sanyo Semicon Device |
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2 / 9 page STK611-721-E No.A1718-2/9 Specifications Absolute Maximum Ratings at Tc = 25 °C Parameter Symbol Conditions Ratings unit Supply voltage VCC + to -, surge < 450V *1 450 V Collector-emitter voltage VDS + to U (V, W) or U (V, W) to - 600 V Output current IO +, -, U, V, W terminal current ±2A Output peak current Iop +, -, U, V, W terminal current P.W. = 100 μs ±4A Pre-driver voltage VD1, 2, 3, 4 VB1 to U, VB2 to V, VB3 to W, VDD to VSS *2 20 V Input signal voltage VIN HIN1, 2, 3, LIN1, 2, 3 terminal 0 to 15 V FAULT/EN terminal voltage VFAULT FAULT/EN terminal 20 V ITRIP terminal voltage VITRIP ITRIP terminal 5 V Maximum power dissipation Pd MOSFET/1 channel 16.6 W Junction temperature Tj MOSFET 150 °C Storage temperature Tstg -40 to +125 °C Operating substrate temperature Tc H-IC case temperature -20 to +100 °C Tightening torque A screw part *3 0.6 N •m Reference voltage is “-” terminal = “VSS” terminal voltage unless otherwise specified. *1 Surge voltage developed by the switching operation due to the wiring inductance between “+” and “-” terminals. *2 Terminal voltage : VD1=VB1 to U, VD2=VB2 to V, VD3=VB3 to W, VD4=VDD to VSS. *3 Flatness of the heat-sink should be 0.15mm and below. Electrical Characteristics at Tc=25 °C, VD=15V Parameter Symbol Conditions Test circuit min typ max unit Power output section Drain-Source Leakage current IDSS VDS = 600V Fig.1 0.1 mA Drain-Source On Resistance RDS(ON) ID = 2A Fig.2 4 Ω Diode forward voltage VSD ID = -2A Fig.3 1.5 V Junction to case thermal resistance θj-c(T) MOSFET 7.5 °C/W Control (Pre-driver) section VD1, 2, 3 = 15V 0.05 0.2 Pre-driver power dissipation ID VD4 = 15V Fig.4 1.4 4.0 mA Input ON threshold voltage Vinth(on) 1.5 2.1 2.5 V Input OFF threshold voltage Vinth(off) HIN1, HIN2, HIN3, LIN1, LIN2, LIN3 to VSS 0.8 1.3 1.5 V FAULT/EN clearness delay time FLTCLR After each protection operation ending 8 ms Protection section Pre-drive power supply low voltage protection voltage UVLO 8 9.8 V Resistance for substrate temperature monitors Rt Resistance between TH and VSS terminals 90 100 110 k Ω Fault/EN terminal input current IOSD VFault = 0.15V 2 mA ITRIP threshold voltage VITRIP 0.41 0.465 0.52 V tON 0.8 Switching time tOFF IO = 2A Inductive load Fig.5 1.5 μs Reference voltage is “-” terminal = “Vss” terminal voltage unless otherwise specified. |
Số phần tương tự - STK611-721-E |
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Mô tả tương tự - STK611-721-E |
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