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MJ10022 bảng dữ liệu(PDF) 2 Page - Motorola, Inc

tên linh kiện MJ10022
Giải thích chi tiết về linh kiện  40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS
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nhà sản xuất  MOTOROLA [Motorola, Inc]
Trang chủ  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MJ10022 bảng dữ liệu(HTML) 2 Page - Motorola, Inc

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MJ10022 MJ10023
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Table 1)
MJ10022
(IC = 100 mA, IB = 0)
MJ10023
VCEO(sus)
350
400
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEV
0.25
5.0
mAdc
Collector Cutoff Current
(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C)
ICER
5.0
mAdc
Emitter Cutoff Current
(VEB = 2.0 V, IC = O)
IEBO
175
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
See Figure 13
Clamped Inductive SOA with Base Reverse Biased
RBSOA
See Figure 14
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 10 Adc, VCE = 5.0 V)
hFE
50
600
Collector–Emitter Saturation Voltage
(IC = 20 Adc, IB = 1.0 Adc)
(IC = 40 Adc, IB = 5.0 Adc)
(IC = 20 Adc, IB = 10 Adc, TC = 100_C)
VCE(sat)
2.2
5.0
2.5
Vdc
Base–Emitter Saturation Voltage
(IC = 20 Adc, IB = 1.2 Adc)
(IC = 20 Adc, IB = 1.2 Adc, TC = 100_C)
VBE(sat)
2.5
2.5
Vdc
Diode Forward Voltage
(IF = 20 Adc)
Vf
2.5
5.0
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
Cob
150
600
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
(VCC = 250 Vdc, IC = 20 A, IB1 = 1.0 Adc,
VBE(off) = 5.0 V, tp = 50 µs,
Duty Cycle
v 2.0%)
td
0.03
0.2
µs
Rise Time
(VCC = 250 Vdc, IC = 20 A, IB1 = 1.0 Adc,
VBE(off) = 5.0 V, tp = 50 µs,
Duty Cycle
v 2.0%)
tr
0.4
1.2
µs
Storage Time
VBE(off) = 5.0 V, tp = 50 µs,
Duty Cycle
v 2.0%)
ts
0.9
2.5
µs
Fall Time
v 2.0%)
tf
0.3
0.9
µs
Inductive Load, Clamped (Table 1)
Storage Time
(ICM = 20 A, VCEM = 250 V, IB1 = 1.0 A,
VBE(off) = 5 V, TC = 100_C)
tsv
1.9
4.4
µs
Crossover Time
(ICM = 20 A, VCEM = 250 V, IB1 = 1.0 A,
VBE(off) = 5 V, TC = 100_C)
tc
0.6
2.0
µs
Fall Time
VBE(off) = 5 V, TC = 100_C)
tfi
0.3
µs
Storage Time
(ICM = 20 A, VCEM = 250 V, IB1 = 1.0 A,
VBE(off) = 5 V, TC = 25_C)
tsv
1.0
µs
Crossover Time
(ICM = 20 A, VCEM = 250 V, IB1 = 1.0 A,
VBE(off) = 5 V, TC = 25_C)
tc
0.3
µs
Fall Time
VBE(off) = 5 V, TC = 25_C)
tfi
0.15
µs
(1) Pulse Test: PW = 300
µs, Duty Cycle v 2%.


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