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Vishay Siliconix

SiZ702DT

New Product

Document Number: 65525

S11-2379-Rev. B, 28-Nov-11

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 30 V (D-S) MOSFETs

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFETs

•

100 % Rg and UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Notebook System Power

•

POL

•

Low Current DC/DC

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (

www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required

to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 67 °C/W for channel-1 and for channel-2.

PRODUCT SUMMARY

VDS (V)

RDS(on) ()ID (A) Qg (Typ.)

Channel-1

and

Channel-2

30

0.0120 at VGS = 10 V

16a

6.8 nC

0.0145 at VGS = 4.5 V

16a

Ordering Information:

SiZ702DT-T1-GE3 (Lead (Pb)-free and Halogen-free)

G1

G2

S2

D1

1

6

5

4

2

3

3.73 mm

6 mm

PowerPAIR® 6 x 3.7

D1

S1/D2

Pin 1

(Pin 7)

D1

S2

N-Channel 2

MOSFET

N-Channel 1

MOSFET

G1

S1/D2

G2

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Channel-1

Channel-2

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

16a

A

TC = 70 °C

16a

TA = 25 °C

13.8b, c

14b, c

TA = 70 °C

11b, c

11.2b, c

Pulsed Drain Current

IDM

50

Source Drain Current Diode Current

TC = 25 °C

IS

16a

TA = 25 °C

3.2b, c

3.7b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

18

Single Pulse Avalanche Energy

EAS

16

mJ

Maximum Power Dissipation

TC = 25 °C

PD

27

30

W

TC = 70 °C

17.4

19

TA = 25 °C

3.9b, c

4.5b, c

TA = 70 °C

2.5b, c

2.9b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Channel-1

Channel-2

Unit

Typ.

Max.

Typ.

Max.

Maximum Junction-to-Ambientb, f

t

 10 s

RthJA

24

32

21

28

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

3.5

4.6

3.2

4.2

Số phần tương tự - SIZ702DT

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Vishay Siliconix	SIZ702DT	159Kb / 12P	N-Channel 30-V (D-S) MOSFETs Rev. A, 02-Nov-09
	SIZ702DT	195Kb / 14P	N-Channel 30 V (D-S) MOSFETs 01-Jan-2022
	SIZ702DT-T1-GE3	159Kb / 12P	N-Channel 30-V (D-S) MOSFETs Rev. A, 02-Nov-09
	SIZ702DT	195Kb / 14P	N-Channel 30 V (D-S) MOSFETs 01-Jan-2022

More results

Mô tả tương tự - SIZ702DT

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Vishay Siliconix	SIZ730DT	211Kb / 14P	N-Channel 30 V (D-S) MOSFETs Rev. B, 28-Nov-11
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	SIZ730DT	209Kb / 14P	N-Channel 30 V (D-S) MOSFETs Rev. A, 04-Apr-11
	SIS476DN	569Kb / 12P	N-Channel 30 V (D-S) MOSFETs 01-Jan-2022
	SIZ730DT	216Kb / 14P	N-Channel 30 V (D-S) MOSFETs 08-Feb-17
	SIZ702DT	159Kb / 12P	N-Channel 30-V (D-S) MOSFETs Rev. A, 02-Nov-09
	SIZ702DT	195Kb / 14P	N-Channel 30 V (D-S) MOSFETs 01-Jan-2022
	SIZ704DT	160Kb / 12P	N-Channel 30-V (D-S) MOSFETs Rev. A, 28-Sep-09
Vishay Telefunken	SIZ730DT	211Kb / 14P	N-Channel 30 V (D-S) MOSFETs
Vishay Siliconix	SIZ300DT	330Kb / 14P	Dual N-Channel 30 V (D-S) MOSFETs Rev. D, 11-Jun-12

More results

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