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FSB50450A bảng dữ liệu(PDF) 2 Page - Fairchild Semiconductor

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FSB50450A Rev. A
Absolute Maximum Ratings
Inverter Part (Each FRFET Unless Otherwise Specified)
Control Part (Each HVIC Unless Otherwise Specified)
Bootstrap Diode Part (Each Bootstrap diode Unless Otherwise Specified)
Thermal Resistance
Total System
Note:
1. For the measurement point of case temperature TC, please refer to Figure 4.
2. Marking “ * “ is calculation value or design factor.
Symbol
Parameter
Conditions
Rating
Units
VPN
DC Link Input Voltage,
Drain-source Voltage of each FRFET
500
V
*ID25
Each FRFET Drain Current, Continuous
TC = 25°C
1.5
A
*ID80
Each FRFET Drain Current, Continuous
TC = 80°C
1.1
A
*IDP
Each FRFET Drain Current, Peak
TC = 25°C, PW < 100ms
3.9
A
*IDRMS
Each FRFET Drain Current, Rms
TC = 80°C, FPWM < 20KHz
0.8
Arms
*PD
Maximum Power Dissipation
TC = 25°C, For Each FRFET
14
W
Symbol
Parameter
Conditions
Rating
Units
VCC
Control Supply Voltage
Applied between VCC and COM
20
V
VBS
High-side Bias Voltage
Applied between VB and VS
20
V
VIN
Input Signal Voltage
Applied between IN and COM
-0.3 ~ VCC+0.3
V
Symbol
Parameter
Conditions
Rating
Units
VRRMB
Maixmum Repetitive Reverse Voltage
500
V
* IFB
Forward Current
TC = 25°C
0.5
A
* IFPB
Forward Current (Peak)
TC = 25°C, Under 1ms Pulse Width
1.5
A
Symbol
Parameter
Conditions
Rating
Units
RqJC
Junction to Case Thermal Resistance
Each FRFET under inverter operat-
ing condition (Note 1)
8.9
°C/W
Symbol
Parameter
Conditions
Rating
Units
TJ
Operating Junction Temperature
-40 ~ 150
°C
TSTG
Storage Temperature
-40 ~ 125
°C
VISO
Isolation Voltage
60Hz, Sinusoidal, 1 minute, Con-
nection pins to heatsink
1500
Vrms


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