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FDD4N60NZ bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor

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Giải thích chi tiết về linh kiện  N-Channel MOSFET 600V, 3.4A, 2.5
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July 2012
©2012 Fairchild Semiconductor Corporation
FDD4N60NZ Rev.C0
www.fairchildsemi.com
1
UniFET-II
TM
MOSFET Maximum Ratings T
C = 25
oC unless otherwise noted*
Thermal Characteristics
Symbol
Parameter
FDD4N60NZ
Units
VDSS
Drain to Source Voltage
600
V
VGSS
Gate to Source Voltage
±25
V
ID
Drain Current
-Continuous (TC = 25
oC)
3.4
A
-Continuous (TC = 100
oC)
2
IDM
Drain Current
- Pulsed
(Note 1)
13.6
A
EAS
Single Pulsed Avalanche Energy
(Note 2)
179.2
mJ
IAR
Avalanche Current
(Note 1)
3.4
A
EAR
Repetitive Avalanche Energy
(Note 1)
11.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5
V/ns
PD
Power Dissipation
(TC = 25
oC)
114
W
- Derate above 25oC
0.9
W/oC
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
oC
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
Symbol
Parameter
FDD4N60NZ
Units
RθJC
Thermal Resistance, Junction to Case
1.1
oC/W
RθJA
Thermal Resistance, Junction to Ambient
110
FDD4N60NZ
N-Channel MOSFET
600V, 3.4A, 2.5Ω
Features
• RDS(on) = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.7A
• Low Gate Charge ( Typ. 8.3nC)
• Low Crss ( Typ. 3.7pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Description
These N-Channel enhancement mode power field effect
tran-
sistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
per-
formance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
G
S
D
G
S
D
G
S
D
D-PAK


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Fairchild Semiconductor
FDD4N60NZ FAIRCHILD-FDD4N60NZ Datasheet
321Kb / 8P
   FDD4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.4 A, 2.5 ?
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FDD4N60NZ ISC-FDD4N60NZ Datasheet
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