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FDD4N60NZ bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor |
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1 / 8 page July 2012 ©2012 Fairchild Semiconductor Corporation FDD4N60NZ Rev.C0 www.fairchildsemi.com 1 UniFET-II TM MOSFET Maximum Ratings T C = 25 oC unless otherwise noted* Thermal Characteristics Symbol Parameter FDD4N60NZ Units VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±25 V ID Drain Current -Continuous (TC = 25 oC) 3.4 A -Continuous (TC = 100 oC) 2 IDM Drain Current - Pulsed (Note 1) 13.6 A EAS Single Pulsed Avalanche Energy (Note 2) 179.2 mJ IAR Avalanche Current (Note 1) 3.4 A EAR Repetitive Avalanche Energy (Note 1) 11.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5 V/ns PD Power Dissipation (TC = 25 oC) 114 W - Derate above 25oC 0.9 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FDD4N60NZ Units RθJC Thermal Resistance, Junction to Case 1.1 oC/W RθJA Thermal Resistance, Junction to Ambient 110 FDD4N60NZ N-Channel MOSFET 600V, 3.4A, 2.5Ω Features • RDS(on) = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.7A • Low Gate Charge ( Typ. 8.3nC) • Low Crss ( Typ. 3.7pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Description These N-Channel enhancement mode power field effect tran- sistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching per- formance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi- cient switching mode power supplies and active power factor correction. G S D G S D G S D D-PAK |
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