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FDD26AN06A0 bảng dữ liệu(PDF) 1 Page - Fairchild Semiconductor |
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FDD26AN06A0 bảng dữ liệu(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2011 Fairchild Semiconductor Corporation Aug 2011 FDD26AN06A0_F085 Rev. C1 N-Channel PowerTrench® MOSFET 60V, 36A, 26m Ω Features •rDS(ON) = 20mΩ (Typ.), VGS = 10V, ID = 36A •Qg(tot) = 13nC (Typ.), VGS = 10V • Low Miller Charge •Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • Motor / Body Load Control •ABS Systems • Powertrain Management • Injection Systems • DC-DC converters and Off-line UPS • Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems MOSFET Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. Symbol Parameter Ratings Units VDSS Drain to Source Voltage 60 V VGS Gate to Source Voltage ±20 V ID Drain Current 36 A Continuous (TC = 25 oC, V GS = 10V) Continuous (TC = 100 oC, V GS = 10V) 25 A Continuous (Tamb = 25 oC, V GS = 10V, R θJA = 52 oC/W) 7 A Pulsed Figure 4 A EAS Single Pulse Avalanche Energy ( Note 1) 35 mJ PD Power dissipation 75 W Derate above 25oC0.5 W/oC TJ, TSTG Operating and Storage Temperature -55 to 175 oC RθJC Thermal Resistance Junction to Case TO-252 2.0 oC/W RθJA Thermal Resistance Junction to Ambient TO-252 100 oC/W RθJA Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 52 oC/W D G S TO-252AA FDD SERIES GATE SOURCE (FLANGE) DRAIN FDD26AN06A0_F085 • RoHS Compliant |
Số phần tương tự - FDD26AN06A0_11 |
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Mô tả tương tự - FDD26AN06A0_11 |
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