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2 / 13 page Characteristics STPS30L60C 2/13 Doc ID 6479 Rev 10 1 Characteristics When the diodes 1 and 2 are used simultaneously: ΔT j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c) Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 60 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current TO-220AB narrow leads, TO-220AB, I2PAK, D2PAK, TO-247, δ = 0.5 Tc = 130 °C Per diode Per device 15 30 A TO-220FPAB, δ = 0.5 Tc = 110 °C Per diode Per device 15 30 IFSM Surge non repetitive forward current tp = 10 ms, sinusoidal 230 A IRRM Repetitive peak reverse current tp = 2 µs square, F = 1 kHz 2A PARM (1) Repetitive peak avalanche power tp = 1 µs, Tj = 25 °C 7800 W VARM (2) Maximum repetitive peak avalanche voltage tp < 1 µs, Tj < 150 °C, IAR < 29 A 80 V VASM (2) Maximum single pulse peak avalanche voltage tp < 1 µs, Tj < 150 °C, IAR < 29 A 80 V Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature(3) 150 °C dV/dt Critical rate of rise reverse voltage 10000 V/µs 1. For temperature or pulse time duration deratings, refer to Figure 4 and Figure 5. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. 2. Refer to Figure 12. 3. condition to avoid thermal runaway for a diode on its own heatsink dPtot dTj < 1 Rth(j-a) Table 3. Thermal resistances Symbol Parameter Value Unit Rth(j-c) Junction to case TO-220AB narrow leads, TO-220AB, I2PAK, D2PAK, TO-247 Per diode 1.5 °C/W Total 0.8 TO-220FPAB Per diode 4.7 Total 3.95 Rth(c) Coupling TO-220AB narrow leads, TO-220AB, I2PAK, D2PAK, TO-247 0.1 TO-220FPAB 3.2 |
Số phần tương tự - STPS30L60C_12 |
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Mô tả tương tự - STPS30L60C_12 |
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