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Characteristics
STPS30L60C
2/13
Doc ID 6479 Rev 10
1
Characteristics
When the diodes 1 and 2 are used simultaneously:
ΔT
j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c)
Table 2.
Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
60
V
IF(RMS) Forward rms current
30
A
IF(AV)
Average forward current
TO-220AB narrow leads,
TO-220AB, I2PAK, D2PAK,
TO-247,
δ = 0.5
Tc = 130 °C
Per diode
Per device
15
30
A
TO-220FPAB,
δ = 0.5
Tc = 110 °C
Per diode
Per device
15
30
IFSM
Surge non repetitive forward current
tp = 10 ms, sinusoidal
230
A
IRRM
Repetitive peak reverse current
tp = 2 µs square, F = 1
kHz
2A
PARM
(1)
Repetitive peak avalanche power
tp = 1 µs, Tj = 25 °C
7800
W
VARM
(2)
Maximum repetitive peak avalanche voltage
tp < 1 µs, Tj < 150 °C,
IAR < 29 A
80
V
VASM
(2)
Maximum single pulse peak avalanche voltage
tp < 1 µs, Tj < 150 °C,
IAR < 29 A
80
V
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature(3)
150
°C
dV/dt
Critical rate of rise reverse voltage
10000
V/µs
1.
For temperature or pulse time duration deratings, refer to Figure 4 and Figure 5. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2.
Refer to Figure 12.
3.
condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
<
1
Rth(j-a)
Table 3.
Thermal resistances
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
TO-220AB narrow leads,
TO-220AB, I2PAK, D2PAK, TO-247
Per diode
1.5
°C/W
Total
0.8
TO-220FPAB
Per diode
4.7
Total
3.95
Rth(c)
Coupling
TO-220AB narrow leads, TO-220AB, I2PAK,
D2PAK, TO-247
0.1
TO-220FPAB
3.2


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