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STRH100N6 bảng dữ liệu(PDF) 7 Page - STMicroelectronics |
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7 / 18 page STRH100N6 Radiation characteristics Doc ID 18353 Rev 3 7/18 3 Radiation characteristics The technology of STMicroelectronics Rad-Hard Power MOSFETs is extremely resistant to radiative environments. Every manufacturing lot is tested for total ionizing dose (irradiation done according to the ESCC 22900 specification, window 1.) using the TO-3 package. Both pre-irradiation and post-irradiation performance are tested and specified using the same circuitry and test conditions in order to provide a direct comparison. (Tamb= 22 ± 3 °C unless otherwise specified). Total dose radiation (TID) testing One bias conditions using the TO-3 package: –VGS bias: + 15 V applied and VDS= 0 V during irradiation The following parameters are measured (see Table 9, Table 10 and Table 11): ● before irradiation ● after irradiation ● after 24 hrs @ room temperature ● after 168 hrs @ 100 °C anneal Table 9. Post-irradiation on/off states @ TJ= 25 °C, (Co60 γ rays 70 K Rad(Si)) Symbol Parameter Test conditions Drift values ∆ Unit IDSS Zero gate voltage drain current (VGS = 0) 80% BVDss +10 µA IGSS Gate body leakage current (VDS = 0) VGS = 20 V VGS = -20 V 1.5 -1.5 nA BVDSS Drain-to-source breakdown voltage VGS = 0, ID = 1 mA -15% V VGS(th) Gate threshold voltage VDS = VGS, ID = 1 mA -60%/ + 25% V RDS(on) Static drain-source on resistance VGS = 10 V; ID = 40 A ±15 % Ω Table 10. Dynamic post-irradiation @ TJ= 25 °C, (Co60 γ rays 70 K Rad(Si)) Symbol Parameter Test conditions Drift values ∆ Unit Qg Total gate charge IG = 1 mA, VGS = 12 V, VDS = 30 V, IDS = 40 A -5% / +50% nC Qgs Gate-source charge ±35 % Qgd Gate-drain charge -5% / +110% |
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