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STPS6045HR bảng dữ liệu(PDF) 2 Page - STMicroelectronics

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Characteristics
STPS6045HR
2/8
Doc ID 18184 Rev 1
1
Characteristics
Table 2.
Absolute maximum ratings
Symbol
Characteristic
Value
Unit
I
FSM
Forward surge current (per diode)(1)
1.
Sinusoidal pulse of 10 ms duration
300
A
VRRM
Repetitive peak reverse voltage(2)
2.
Pulsed, duration 5 ms, F = 50 Hz
45
V
IRRM
Repetitive peak reverse current(3)
3.
Pulsed, duration 2 µs, F = 1 kHz
1A
IO
Average output rectified current (50% duty cycle):(4) (5)
per diode
per device
4.
For Tcase > +138 °C per device and Tcase > +144 °C per device, derate linearly to 0 A at +175 °C.
5.
The per device ratings apply only when both anode terminals are tied together.
30
40
A
IF(RMS)
Forward rms current (per diode)
30
A
TOP
Operating temperature range(6)
(case temperature)
6.
For solder dip lead finish devices all testing performed at Tamb > +125 °C shall be carried out in a 100%
inert atmosphere.
-65 to +175
°C
TJ
Junction temperature
+175
°C
TSTG
Storage temperature range(6)
-65 to +175
°C
T
SOL
Soldering temperature(7)
7.
Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same
lead shall not be resoldered until 3 minutes have elapsed.
+260
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/µs
Table 3.
Thermal resistance
Symbol
Characteristic
Value
Unit
Rth(j-c)
(1)
1.
Package mounted on infinite heatsink
Thermal resistance, junction to case
per diode
per device(2)
2.
The per device ratings apply only when both anode terminals are tied togther.
1.7
1.2
°C/W


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