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STPS6045HR bảng dữ liệu(PDF) 2 Page - STMicroelectronics |
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STPS6045HR bảng dữ liệu(HTML) 2 Page - STMicroelectronics |
2 / 8 page Characteristics STPS6045HR 2/8 Doc ID 18184 Rev 1 1 Characteristics Table 2. Absolute maximum ratings Symbol Characteristic Value Unit I FSM Forward surge current (per diode)(1) 1. Sinusoidal pulse of 10 ms duration 300 A VRRM Repetitive peak reverse voltage(2) 2. Pulsed, duration 5 ms, F = 50 Hz 45 V IRRM Repetitive peak reverse current(3) 3. Pulsed, duration 2 µs, F = 1 kHz 1A IO Average output rectified current (50% duty cycle):(4) (5) per diode per device 4. For Tcase > +138 °C per device and Tcase > +144 °C per device, derate linearly to 0 A at +175 °C. 5. The per device ratings apply only when both anode terminals are tied together. 30 40 A IF(RMS) Forward rms current (per diode) 30 A TOP Operating temperature range(6) (case temperature) 6. For solder dip lead finish devices all testing performed at Tamb > +125 °C shall be carried out in a 100% inert atmosphere. -65 to +175 °C TJ Junction temperature +175 °C TSTG Storage temperature range(6) -65 to +175 °C T SOL Soldering temperature(7) 7. Duration 10 seconds maximum at a distance of not less than 1.5 mm from the device body and the same lead shall not be resoldered until 3 minutes have elapsed. +260 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs Table 3. Thermal resistance Symbol Characteristic Value Unit Rth(j-c) (1) 1. Package mounted on infinite heatsink Thermal resistance, junction to case per diode per device(2) 2. The per device ratings apply only when both anode terminals are tied togther. 1.7 1.2 °C/W |
Số phần tương tự - STPS6045HR |
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Mô tả tương tự - STPS6045HR |
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