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2SC6125 bảng dữ liệu(PDF) 2 Page - Toshiba Semiconductor

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nhà sản xuất  TOSHIBA [Toshiba Semiconductor]
Trang chủ  http://www.semicon.toshiba.co.jp/eng
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2SC6125 bảng dữ liệu(HTML) 2 Page - Toshiba Semiconductor

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2SC6125
2009-09-24
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 40 V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB = 6 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
20
V
hFE (1)
VCE = 2 V, IC = 0.5 A
180
390
DC current gain
hFE (2)
VCE = 0.8 V, IC = 2 A
100
Collector emitter saturation voltage
VCE (sat)
IC = 1.6 A, IB = 53 mA
0.2
V
Base-emitter saturation voltage
VBE (sat)
IC = 1.6 A, IB = 53 mA
1.1
V
Collector output capacitance
Cob
VCB = 10 V, IE =0 ,f=1MHz
18
pF
Rise time
tr
70
Storage time
tstg
160
Switching time
Fall time
tf
See Figure 1 circuit diagram
VCC ≈ 12 V、RL = 7.5 Ω
IB1 = IB2 = 53 mA
15
ns
Figure 1. Switching Time Test Circuit & Timing Chart
Marking
Note 4: A line beside a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
4
L
Part No. (or abbreviation code)
Lot No.
Note 4
Duty cycle
< 1%
Output
Input
IB2
IB1
VCC
RL
20
μs
IB1
IB2
0


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