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2SC6125 bảng dữ liệu(PDF) 2 Page - Toshiba Semiconductor |
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2SC6125 bảng dữ liệu(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page 2SC6125 2009-09-24 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current ICBO VCB = 40 V, IE = 0 ⎯ ⎯ 100 nA Emitter cutoff current IEBO VEB = 6 V, IC = 0 ⎯ ⎯ 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 20 ⎯ ⎯ V hFE (1) VCE = 2 V, IC = 0.5 A 180 ⎯ 390 DC current gain hFE (2) VCE = 0.8 V, IC = 2 A 100 ⎯ ⎯ Collector emitter saturation voltage VCE (sat) IC = 1.6 A, IB = 53 mA ⎯ ⎯ 0.2 V Base-emitter saturation voltage VBE (sat) IC = 1.6 A, IB = 53 mA ⎯ ⎯ 1.1 V Collector output capacitance Cob VCB = 10 V, IE =0 ,f=1MHz ⎯ 18 ⎯ pF Rise time tr ⎯ 70 ⎯ Storage time tstg ⎯ 160 ⎯ Switching time Fall time tf See Figure 1 circuit diagram VCC ≈ 12 V、RL = 7.5 Ω IB1 = IB2 = 53 mA ⎯ 15 ⎯ ns Figure 1. Switching Time Test Circuit & Timing Chart Marking Note 4: A line beside a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 4 L Part No. (or abbreviation code) Lot No. Note 4 Duty cycle < 1% Output Input IB2 IB1 VCC RL 20 μs IB1 IB2 0 |
Số phần tương tự - 2SC6125 |
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Mô tả tương tự - 2SC6125 |
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