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STP4925 bảng dữ liệu(PDF) 2 Page - Stanson Technology

tên linh kiện STP4925
Giải thích chi tiết về linh kiện  STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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nhà sản xuất  STANSON [Stanson Technology]
Trang chủ  http://www.stansontech.com
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STP4925 bảng dữ liệu(HTML) 2 Page - Stanson Technology

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STP4925
P Dual Channel Enhancement Mode
MOSFET
-
7.2A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP4925 2007. V1
ABSOULTE MAXIMUM RATINGS
(Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
(TJ=150℃)
TA=25℃
TA=70℃
ID
-7.2
-5.6
A
Pulsed Drain Current
IDM
-20
A
Continuous Source Current
(Diode Conduction)
IS
-2.3
A
Power Dissipation
TA=25℃
TA=70℃
PD
2.8
1.8
W
Operation Junction Temperature
TJ
-55/150
Storgae Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RθJA
70
℃/W


Số phần tương tự - STP4925

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
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SHENZHEN DOINGTER SEMIC...
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   Dual P-Channel MOSFET uses advanced trench technology
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Mô tả tương tự - STP4925

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