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STP4407 bảng dữ liệu(PDF) 6 Page - Stanson Technology

tên linh kiện STP4407
Giải thích chi tiết về linh kiện  The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
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nhà sản xuất  STANSON [Stanson Technology]
Trang chủ  http://www.stansontech.com
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STP4407 bảng dữ liệu(HTML) 6 Page - Stanson Technology

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STP
STP
STP
STP4
4
4
44
4
4
407
07
07
07
P Channel Enhancement Mode MOSFET
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12A
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294
FAX: (650) 9389295
Copyright © 2007, Stanson Corp.
STP4407 2009. V1
6
PACKAGE
PACKAGE
PACKAGE
PACKAGE OUTLINE
OUTLINE
OUTLINE
OUTLINE SOP-8P
SOP-8P
SOP-8P
SOP-8P


Số phần tương tự - STP4407

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
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VBsemi Electronics Co.,...
STP4407 VBSEMI-STP4407 Datasheet
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   P-Channel 30-V (D-S) MOSFET
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SHENZHEN DOINGTER SEMIC...
STP4407A DOINGTER-STP4407A Datasheet
1Mb / 5P
   P-Channel MOSFET uses advanced trench technology
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VBsemi Electronics Co.,...
STP4407A VBSEMI-STP4407A Datasheet
898Kb / 9P
   P-Channel 30-V (D-S) MOSFET
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Mô tả tương tự - STP4407

nhà sản xuấttên linh kiệnbảng dữ liệuGiải thích chi tiết về linh kiện
logo
Stanson Technology
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   ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
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   The ST3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
ST3400SRG STANSON-ST3400SRG Datasheet
547Kb / 6P
   The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
ST3407SRG STANSON-ST3407SRG Datasheet
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   ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP9527 STANSON-STP9527 Datasheet
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   STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2315SRG STANSON-ST2315SRG Datasheet
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   ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP7401 STANSON-STP7401 Datasheet
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   STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST3401SRG STANSON-ST3401SRG Datasheet
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   ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
STP9437 STANSON-STP9437 Datasheet
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   STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
ST2341A STANSON-ST2341A Datasheet
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   ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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