STN9926 datasheet(2/7 Pages) STANSON

tên linh kiện	STN9926

Giải thích chi tiết về linh kiện	The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

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nhà sản xuất	STANSON [Stanson Technology]

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STN9926

Dual N Channel Enhancement Mode MOSFET

5A

120 Bentley Square, Mountain View, Ca 94040 USA

www.syonsontech.com

STN9926 2007. V1

2

ABSOULTE

ABSOULTE MAXIMUM

MAXIMUM

MAXIMUM RATINGS

RATINGS

RATINGS (Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±12

V

Continuous Drain Current

(TJ=150℃)

TA=25℃

TA=70℃

ID

5.0

4.0

A

Pulsed Drain Current

IDM

30

A

Continuous Source Current

(Diode Conduction)

IS

1.6

A

Power Dissipation

TA=25℃

TA=70℃

PD

2.8

1.8

W

Operation Junction Temperature

TJ

-55/150

℃

Storgae Temperature Range

TSTG

-55/150

℃

Thermal Resistance-Junction to Ambient

RθJA

105

℃/W

Số phần tương tự - STN9926

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Stanson Technology	STN9926AA	233Kb / 7P	The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
VBsemi Electronics Co.,...	STN9926AA	985Kb / 7P	Dual N-Channel 20-V (D-S) MOSFET

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Mô tả tương tự - STN9926

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Stanson Technology	STN9926AA	233Kb / 7P	The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
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