STN4416 datasheet(3/6 Pages) STANSON

tên linh kiện	STN4416

Giải thích chi tiết về linh kiện	STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

Download	6 Pages

Scroll/Zoom	100%

nhà sản xuất	STANSON [Stanson Technology]

Trang chủ	http://www.stansontech.com

Logo

3 / 6 page

STN4416

N Channel Enhancement Mode MOSFET

10A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN4416 2009. V1

ELECTRICAL

ELECTRICAL CHARACTERISTICS

CHARACTERISTICS

CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Static

Drain-Source

Breakdown Voltage

V(BR)DSS

VGS=0V,ID=250uA

20

V

Gate Threshold

Voltage

VGS(th)

VDS=VGS,ID=250uA

0.6

1.4

V

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

±100

nA

Zero Gate Voltage

Drain Current

IDSS

VDS=20V,VGS=0V

1

uA

VDS=20V,VGS=0V

TJ=85℃

5

On-State Drain

Current

ID(on)

VDS≧5V,VGS=10V

6

A

Drain-source On-

Resistance

RDS(on)

VGS=4.5V,ID=6.8A

VGS=2.5V,ID=5.6A

11

23

mΩ

Forward

Transconductance

gfs

VDS=15V,ID=6.2AV

30

S

Diode Forward Voltage

VSD

IS=1.0A,VGS=0V

0.8

1.2

V

Dynamic

Total Gate Charge

Qg

VDS=10V,VGS=4.5V

ID≡5.0A

25

35

nC

Gate-Source Charge

Qgs

5.6

Gate-Drain Charge

Qgd

9.6

Input Capacitance

Ciss

VDS ==10V,VGS=0V

f=1MHz

1250

pF

Output Capacitance

Coss

235

Reverse

TransferCapacitance

Crss

195

Turn-On Time

td(on)

tr

VDD=10V,RL=10Ω

ID=1A,VGEN=4.5V

RG=6Ω

20

30

nS

18

28

Turn-Off Time

td(off)

tf

75

90

65

85

Số phần tương tự - STN4416

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Stanson Technology	STN4412	489Kb / 6P	N Channel Enhancement Mode MOSFET
Stanson Technology	STN4412S8RG	489Kb / 6P	N Channel Enhancement Mode MOSFET
VBsemi Electronics Co.,...	STN4412S8RG	1Mb / 9P	N-Channel 20V (D-S) MOSFET
Stanson Technology	STN4412S8TG	489Kb / 6P	N Channel Enhancement Mode MOSFET

More results

Mô tả tương tự - STN4416

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Stanson Technology	STN4346	352Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4426	362Kb / 6P	STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST3406SRG	325Kb / 6P	ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4392	383Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4480	742Kb / 6P	STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4850	532Kb / 6P	STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN1810	966Kb / 7P	STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4438	269Kb / 6P	STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4546	363Kb / 6P	STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST2304SRG	630Kb / 6P	ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

More results

STN4416 bảng dữ liệu(PDF) 3 Page - Stanson Technology

STN4416 bảng dữ liệu(HTML) 3 Page - Stanson Technology

Số phần tương tự - STN4416

Mô tả tương tự - STN4416

Html Pages

1 2 3 4 5 6

bảng dữ liệu tải về

Link URL