STN4346 datasheet(3/7 Pages) STANSON

tên linh kiện	STN4346

Giải thích chi tiết về linh kiện	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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STN4

STN4346

346

N Channel Enhancement Mode MOSFET

6.8A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN4346 2010. V1

ELECTRICAL

ELECTRICAL CHARACTERISTICS

CHARACTERISTICS

CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Static

Drain-Source

Breakdown Voltage

V(BR)DSS

VGS=0V,ID=250uA

30

V

Gate Threshold

Voltage

VGS(th)

VDS=VGS,ID=250uA

1.0

3.0

V

Gate Leakage Current

IGSS

VDS=0V,VGS=±12V

±100

nA

Zero Gate Voltage

Drain Current

IDSS

VDS=24V,VGS=0V

1

uA

VDS=24V,VGS=0V

TJ=85℃

100

On-State Drain

Current

ID(on)

VDS≥5V,VGS=10V

25

A

Drain-source On-

Resistance

RDS(on)

VGS=10V,ID=6.8A

VGS=4.5V,ID=6.0A

VGS=2.5V,ID=5.6A

18

24

36

26

34

40

mΩ

Forward

Transconductance

gfs

VDS=15V,ID=6.2A

13

S

Diode Forward Voltage

VSD

IS=2.3A,VGS=0V

0.8

1.2

V

Dynamic

Total Gate Charge

Qg

VDS=15V,VGS=10V

ID≡2A

16

24

nC

Gate-Source Charge

Qgs

3

Gate-Drain Charge

Qgd

2.5

Turn-On Time

td(on)

tr

VDD=15V,RL=15Ω

ID=1.0A,VGS=10V

RG=6Ω

15

20

nS

6

12

Turn-Off Time

td(off)

tf

10

20

40

80

Số phần tương tự - STN4346

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Stanson Technology	STN4392	383Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
SHENZHEN DOINGTER SEMIC...	STN4392	920Kb / 5P	N-Channel MOSFET uses advanced trench technology

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Mô tả tương tự - STN4346

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Stanson Technology	STN4392	383Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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