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ST2315SRG bảng dữ liệu(PDF) 3 Page - Stanson Technology

tên linh kiện ST2315SRG
Giải thích chi tiết về linh kiện  ST2315SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
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ST2315SRG
P Channel Enhancement Mode MOSFET
-4.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2315SRG 2010. V1
ELECTRICAL CHARACTERISTICS
( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
Typ
Max Unit
Static
Drain-Source Breakdown
Voltage
V(BR)DSS
VGS=0V,ID=-250uA
-20
V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250uA
-0.4
-1.0
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±12V
±100
nA
Zero Gate Voltage Drain
Current
IDSS
VDS=-20V,VGS=0V
-1
uA
VDS=-20V,VGS=0V
TJ=55℃
-10
Drain-source On-Resistance
RDS(on)
VGS=-4.5V,ID=-4.0A
VGS=-2.5V,ID=-3.0A
VGS=-1.8V,ID=-2.0A
0.040
0.060
0.090
Ω
Forward Transconductance
gfs
VDS=-5V,ID=-3.5V
8.5
S
Diode Forward Voltage
VSD
IS=-1.6A,VGS=0V
-0.8
-1.2
V
Dynamic
Total Gate Charge
Qg
VDS=-10V
VGS=-4.5V
ID≡-3.5A
10
12
nC
Gate-Source Charge
Qgs
2
Gate-Drain Charge
Qgd
2
Input Capacitance
Ciss
VDS=-10V
VGS=0V
F=1MHz
485
pF
Output Capacitance
Coss
90
Reverse Transfer
Capacitance
Crss
40
Turn-On Time
td(on)
tr
VDD=-10V
RL=6Ω
ID=-1.0A
VGEN=-4.5V
RG=6Ω
10
18
nS
13
22
Turn-Off Time
td(off)
tf
18
24
15
20


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