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BYV26 bảng dữ liệu(PDF) 2 Page - Shenzhen Taychipst Electronic Co., Ltd |
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BYV26 bảng dữ liệu(HTML) 2 Page - Shenzhen Taychipst Electronic Co., Ltd |
2 / 7 page 2 of 7 E-mail: sales@taychipst.com Web Site: www.taychipst.com ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 1 A; Tj =Tj max; see Figs 14 and 15 BYV26A to E −− 1.3 V BYV26F and G −− 1.3 V VF forward voltage IF =1A; see Figs 14 and 15 BYV26A to E −− 2.50 V BYV26F and G −− 2.15 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYV26A 300 −− V BYV26B 500 −− V BYV26C 700 −− V BYV26D 900 −− V BYV26E 1100 −− V BYV26F 1300 −− V BYV26G 1500 −− V IR reverse current VR =VRRMmax; see Fig.16 −− 5 µA VR =VRRMmax; Tj = 165 °C; see Fig.16 −− 150 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25 A; see Fig.20 BYV26A to C −− 30 ns BYV26D and E −− 75 ns BYV26F and G −− 150 ns Cd diode capacitance f = 1 MHz; VR =0V; see Figs 17 and 18 BYV26A to C − 45 − pF BYV26D and E − 40 − pF BYV26F and G − 35 − pF THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19. For more information please refer to the “General Part of associated Handbook”. maximum slope of reverse recovery current when switched from IF = 1 A to VR ≥ 30 V and dIF/dt = −1A/µs; see Fig.21 BYV26A to C −− 7A/ µs BYV26D and E −− 6A/ µs BYV26F and G −− 5A/ µs SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W Rth j-a thermal resistance from junction to ambient note 1 100 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dI R dt -------- 200V-1400V 0.65A-1.05 Fast soft-recovery controlled avalanche rectifiers BYV26 series |
Số phần tương tự - BYV26 |
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Mô tả tương tự - BYV26 |
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