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BYV26 bảng dữ liệu(PDF) 2 Page - Shenzhen Taychipst Electronic Co., Ltd

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Giải thích chi tiết về linh kiện  Fast soft-recovery controlled avalanche rectifiers
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nhà sản xuất  TAYCHIPST [Shenzhen Taychipst Electronic Co., Ltd]
Trang chủ  http://www.taychipst.com
Logo TAYCHIPST - Shenzhen Taychipst Electronic Co., Ltd

BYV26 bảng dữ liệu(HTML) 2 Page - Shenzhen Taychipst Electronic Co., Ltd

  BYV26 Datasheet HTML 1Page - Shenzhen Taychipst Electronic Co., Ltd BYV26 Datasheet HTML 2Page - Shenzhen Taychipst Electronic Co., Ltd BYV26 Datasheet HTML 3Page - Shenzhen Taychipst Electronic Co., Ltd BYV26 Datasheet HTML 4Page - Shenzhen Taychipst Electronic Co., Ltd BYV26 Datasheet HTML 5Page - Shenzhen Taychipst Electronic Co., Ltd BYV26 Datasheet HTML 6Page - Shenzhen Taychipst Electronic Co., Ltd BYV26 Datasheet HTML 7Page - Shenzhen Taychipst Electronic Co., Ltd  
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E-mail: sales@taychipst.com
Web Site: www.taychipst.com
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; Tj =Tj max;
see Figs 14 and 15
BYV26A to E
−−
1.3
V
BYV26F and G
−−
1.3
V
VF
forward voltage
IF =1A;
see Figs 14 and 15
BYV26A to E
−−
2.50
V
BYV26F and G
−−
2.15
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYV26A
300
−−
V
BYV26B
500
−−
V
BYV26C
700
−−
V
BYV26D
900
−−
V
BYV26E
1100
−−
V
BYV26F
1300
−−
V
BYV26G
1500
−−
V
IR
reverse current
VR =VRRMmax; see Fig.16
−−
5
µA
VR =VRRMmax;
Tj = 165 °C; see Fig.16
−−
150
µA
trr
reverse recovery time
when switched from
IF = 0.5 A to IR =1A;
measured at IR = 0.25 A;
see Fig.20
BYV26A to C
−−
30
ns
BYV26D and E
−−
75
ns
BYV26F and G
−−
150
ns
Cd
diode capacitance
f = 1 MHz; VR =0V;
see Figs 17 and 18
BYV26A to C
45
pF
BYV26D and E
40
pF
BYV26F and G
35
pF
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm, see Fig.19.
For more information please refer to the
“General Part of associated Handbook”.
maximum slope of reverse recovery
current
when switched from
IF = 1 A to VR ≥ 30 V and
dIF/dt = −1A/µs;
see Fig.21
BYV26A to C
−−
7A/
µs
BYV26D and E
−−
6A/
µs
BYV26F and G
−−
5A/
µs
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
46
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
200V-1400V
0.65A-1.05
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series


Số phần tương tự - BYV26

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Mô tả tương tự - BYV26

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