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FGB7N60UNDF bảng dữ liệu(PDF) 5 Page - Fairchild Semiconductor

tên linh kiện FGB7N60UNDF
Giải thích chi tiết về linh kiện  600V, 7A Short Circuit Rated IGBT
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nhà sản xuất  FAIRCHILD [Fairchild Semiconductor]
Trang chủ  http://www.fairchildsemi.com
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FGB7N60UNDF bảng dữ liệu(HTML) 5 Page - Fairchild Semiconductor

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FGB7N60UNDF Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
Figure 11. Turn-on Characteristics vs.
Figure 12. Turn-off Characteristics vs.
Gate Resistance
Gate Resistance
4
8
12
16
20
0
4
8
12
16
20
IC = 3.5A
7A
14A
Common Emitter
T
C = 25
o
C
Gate-Emitter Voltage, VGE [V]
1
10
10
100
1000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25
o
C
Cres
C
oes
C
ies
Collector-Emitter Voltage, VCE [V]
30
0
5
10
15
20
0
3
6
9
12
15
Common Emitter
TC = 25
o
C
400V
200V
V
CC = 100V
Gate Charge, Qg [nC]
1
10
100
1000
0.01
0.1
1
10
Single Nonrepetitive
Pulse TC = 25
oC
Curves must be derated
linearly with increase
in temperature
1ms
10 ms
DC
10µs
100µs
Collector-Emitter Voltage, VCE [V]
30
0
10
20
30
40
50
60
0.1
1
10
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 7A
TC = 25
o
C
TC = 125
o
C
t
d(on)
t
r
Gate Resistance, RG []
200
0
10
20
30
40
50
60
10
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 7A
TC = 25
o
C
TC = 125
o
C
t
d(off)
t
f
Gate Resistance, RG []
300


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