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MCR8DSN bảng dữ liệu(PDF) 1 Page - Motorola, Inc |
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MCR8DSN bảng dữ liệu(HTML) 1 Page - Motorola, Inc |
1 / 6 page 1 Motorola Thyristor Device Data Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size • Passivated Die for Reliability and Uniformity • Low Level Triggering and Holding Characteristics • Available in Two Package Styles Surface Mount Lead Form — Case 369A Miniature Plastic Package — Straight Leads — Case 369 ORDERING INFORMATION • To Obtain “DPAK” in Surface Mount Leadform (Case 369A) Shipped in Sleeves — No Suffix, i.e. MCR8DSN Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number, i.e. MCR8DSNT4 • To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves — Add “–1” Suffix to Device Number, i.e. MCR8DSN–1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage (1) Peak Repetitive Reverse Voltage (TJ = –40 to 110°C, RGK = 1.0 KW) MCR8DSM MCR8DSN VDRM VRRM 600 800 Volts On–State RMS Current (All Conduction Angles; TC = 90°C) IT(RMS) 8.0 Amps Average On–State Current (All Conduction Angles; TC = 90°C) IT(AV) 5.1 Peak Non–Repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 110°C) ITSM 90 Circuit Fusing Consideration (t = 8.3 msec) I2t 34 A2sec Peak Gate Power (Pulse Width ≤ 10 msec, TC = 90°C) PGM 5.0 Watts Average Gate Power (t = 8.3 msec, TC = 90°C) PG(AV) 0.5 Peak Gate Current (Pulse Width ≤ 10 msec, TC = 90°C) IGM 2.0 Amps Operating Junction Temperature Range TJ –40 to 110 °C Storage Temperature Range Tstg –40 to 150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Thermal Resistance — Junction to Ambient (2) RqJC RqJA RqJA 2.2 88 80 °C/W Maximum Lead Temperature for Soldering Purposes (3) TL 260 °C (1) VDRM for all types can be applied on a continuous basis. Ratings apply for negative gate voltage or RGK = 1.0 KW; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. (2) Surface mounted on minimum recommended pad size. (3) 1/8 ″ from case for 10 seconds. Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by MCR8DSM/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCR8DSM MCR8DSN SCRs 8.0 AMPERES RMS 600 thru 800 VOLTS CASE 369A–13 STYLE 4 A K G A G A K Motorola Preferred Devices © Motorola, Inc. 1997 |
Số phần tương tự - MCR8DSN |
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Mô tả tương tự - MCR8DSN |
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