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MCR8DSM bảng dữ liệu(PDF) 4 Page - Motorola, Inc |
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MCR8DSM bảng dữ liệu(HTML) 4 Page - Motorola, Inc |
4 / 6 page MCR8DSM MCR8DSN 4 Motorola Thyristor Device Data Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature Figure 9. Holding Current versus Gate–Cathode Resistance 65 110 –40 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) 1000 10 K 100 RGK, GATE–CATHODE RESISTANCE (OHMS) 10 6.0 4.0 2.0 0 1.0 0.1 –25 5.0 20 50 95 10 TJ = 25°C –10 35 80 Figure 10. Exponential Static dv/dt versus Gate–Cathode Resistance and Junction Temperature 100 RGK, GATE–CATHODE RESISTANCE (OHMS) 1000 10 1.0 TJ = 110°C 1000 IGT = 10 mA RGK = 1.0 KW 65 110 –40 1.0 0.1 –25 5.0 20 50 95 10 –10 35 80 RGK = 1.0 KW Figure 11. Exponential Static dv/dt versus Gate–Cathode Resistance and Peak Voltage Figure 12. Exponential Static dv/dt versus Gate–Cathode Resistance and Gate Trigger Current Sensitivity 8.0 IGT = 25 mA 100 90 °C 70 °C 100 RGK, GATE–CATHODE RESISTANCE (OHMS) 1000 10 1.0 TJ = 110°C 1000 100 VPK = 800 V 600 V 400 V 100 RGK, GATE–CATHODE RESISTANCE (OHMS) 1000 10 1.0 VD = 800 V TJ = 110°C 1000 100 IGT = 10 mA IGT = 25 mA |
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Mô tả tương tự - MCR8DSM |
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