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2 / 9 page Characteristics STPS20SM60S 2/9 Doc ID 022058 Rev 1 1 Characteristics To evaluate the conduction losses use the following equation: P = 0.430 x IF(AV) + 0.0075 x IF 2 (RMS) Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited at Tamb = 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 60 V IF(RMS) Forward rms current 60 A IF(AV) Average forward current, δ = 0.5 Tc = 130 °C Per package 20 A IFSM Surge non repetitive forward current tp = 10 ms sine-wave 400 A PARM (1) 1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. Repetitive peak avalanche power Tj = 25 °C, tp = 1 µs 18400 W VARM (2) 2. See Figure 12 Maximum repetitive peak avalanche voltage tp < 1 µs, Tj < 150 °C, IAR < 69 A 80 V VASM (2) Maximum single-pulse peak avalanche voltage tp < 1 µs, Tj < 150 °C, IAR < 69 A 80 V Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature(3) 3. condition to avoid thermal runaway for a diode on its own heatsink 150 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case 1.3 °C/W Table 4. Static electrical characteristics (terminals 1 and 3 short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 5 ms, δ < 2 % Reverse leakage current Tj = 25 °C VR = VRRM -20 85 µA Tj = 125 °C - 15 50 mA VF (2) 2. Pulse test: tp = 380 µs, δ < 2 % Forward voltage drop Tj = 25 °C IF = 10 A - 0.495 0.535 V Tj = 125 °C - 0.410 0.460 Tj = 25 °C IF = 20 A - 0.570 0.630 Tj = 125 °C - 0.510 0.580 dPtot dTj < 1 Rth(j-a) |
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