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STPS20SM60SR bảng dữ liệu(PDF) 2 Page - STMicroelectronics

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Characteristics
STPS20SM60S
2/9
Doc ID 022058 Rev 1
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.430 x IF(AV) + 0.0075 x IF
2
(RMS)
Table 2.
Absolute ratings (limiting values with terminals 1 and 3 short circuited at
Tamb = 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
60
V
IF(RMS) Forward rms current
60
A
IF(AV)
Average forward current,
δ = 0.5
Tc = 130 °C Per package
20
A
IFSM
Surge non repetitive forward current
tp = 10 ms sine-wave
400
A
PARM
(1)
1.
For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
Repetitive peak avalanche power
Tj = 25 °C, tp = 1 µs
18400
W
VARM
(2)
2.
See Figure 12
Maximum repetitive peak
avalanche voltage
tp < 1 µs, Tj < 150 °C, IAR < 69 A
80
V
VASM
(2)
Maximum single-pulse
peak avalanche voltage
tp < 1 µs, Tj < 150 °C, IAR < 69 A
80
V
Tstg
Storage temperature range
-65 to +175
°C
Tj
Maximum operating junction temperature(3)
3.
condition to avoid thermal runaway for a diode on its own heatsink
150
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
1.3
°C/W
Table 4.
Static electrical characteristics (terminals 1 and 3 short circuited)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 5 ms, δ < 2 %
Reverse leakage
current
Tj = 25 °C
VR = VRRM
-20
85
µA
Tj = 125 °C
-
15
50
mA
VF
(2)
2.
Pulse test: tp = 380 µs, δ < 2 %
Forward voltage drop
Tj = 25 °C
IF = 10 A
-
0.495
0.535
V
Tj = 125 °C
-
0.410
0.460
Tj = 25 °C
IF = 20 A
-
0.570
0.630
Tj = 125 °C
-
0.510
0.580
dPtot
dTj
<
1
Rth(j-a)


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