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ADF4360-0BCPZ bảng dữ liệu(PDF) 6 Page - Analog Devices

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Giải thích chi tiết về linh kiện  Integrated Synthesizer and VCO
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ADF4360-0
Data Sheet
Rev. B | Page 6 of 24
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Rating
AVDD to GND1
−0.3 V to +3.9 V
AVDD to DVDD
−0.3 V to +0.3 V
VVCO to GND
−0.3 V to +3.9 V
VVCO to AVDD
−0.3 V to +0.3 V
Digital I/O Voltage to GND
−0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND
−0.3 V to VDD + 0.3 V
REFIN to GND
−0.3 V to VDD + 0.3 V
Operating Temperature Range
−40°C to + 85°C
Storage Temperature Range
−65°C to +150°C
Maximum Junction Temperature
150°C
CSP θJA Thermal Impedance
Paddle Soldered
50°C/W
Paddle Not Soldered
88°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec)
215°C
Infrared (15 sec)
220°C
1 GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those included in the operational
sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may
affect device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
12543 (CMOS) and 700 (Bipolar).
ESD CAUTION


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