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2 / 4 page UF1010A Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R502-582.A ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate to Source Voltage VGSS ±20 V Continuous (VGS=10V) ID 84 Drain Current Pulsed (Note 2) IDM 330 A Avalanche Current (Note 2) IAR 50 A Repetitive (Note 2) EAR 17 mJ Avalanche Energy Single Pulsed (Note3) EAS 1180 mJ Power Dissipation (TC=25°C) PD 200 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. TJ=25°C, L=260μH, RG=25Ω, IAS=50A THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62 °C/W Junction to Case θJc 0.75 °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0 V, ID=250μA 60 V VDS=60 V, VGS=0 V 25 μA Drain-Source Leakage Current IDSS VDS=48 V, VGS=0 V,TJ=150°C 250 μA Gate-Source Leakage Current IGSS VGS=±20 V, VDS=0 V ±100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=1mA 0.064 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On Resistance(Note) RDS(ON) VGS=10 V, ID=50A 12 mΩ DYNAMIC PARAMETERS Input Capacitance CISS 3210 pF Output Capacitance COSS 690 pF Reverse Transfer Capacitance CRSS VDS=25V, VGS=0 V, f=1MHz 140 pF SWITCHING PARAMETERS Total Gate Charge QG 130 nC Gate-to-Source Charge QGS 28 nC Gate-to-Drain ("Miller") Charge QGD ID =50A, VDS =48V,VGS =10V 44 nC Turn ON Delay Time tD(ON) 12 ns Turn ON Rise Time tR 78 ns Turn OFF Delay Time tD(OFF) 48 ns Turn OFF Fall Time tF VDD =30V, ID =50A, RG =3.6Ω VGS = 10V 53 ns Internal Drain Inductance LD 4.5 nH Internal Source Inductance LS 7.5 nH Diode Forward Voltage VSD TJ = 25°C, IS = 50A, VGS = 0V 1.3 V Maximum Continuous Drain-Source Diode Forward Current IS 84 A Maximum Pulsed Drain-Source Diode Forward Current ISM 330 A Reverse Recovery Time tRR 73 110 ns Reverse Recovery Charge QRR TJ=25°C, IF=50A, di/dt=100A/μs 220 330 nC Note: Pulse width ≤ 400μs; duty cycle ≤ 2%. |
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