6N90

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-492.C

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

900

V

Gate-Source Voltage

±30

V

Drain Current

6.2

A

Pulsed (Note 2)

24

A

Avalanche Energy

Single Pulsed (Note 3)

650

mJ

Repetitive (Note 2)

16.7

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation

TO-220

167

W

TO-220F/TO220F1

56

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

TO-220

0.75

°C/W

TO-220F/TO220F1

2.25

°C/W